A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques
B Shan, H Fu, J Wang - Micromachines, 2024 - mdpi.com
This paper presents a highly integrated C-band RF transceiver front-end design consisting
of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise …
of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise …
An ultra-wideband noise-reduction LNA with variable gain for wireless wake-up receivers
M Bouraoui, I Barraj, A Neifar… - 2022 IEEE International …, 2022 - ieeexplore.ieee.org
The design of an ultra-wideband low-noise amplifier for wake-up receiver applications is
discussed in this article. The LNA circuit is developed for the 3–9 GHz frequency ranges …
discussed in this article. The LNA circuit is developed for the 3–9 GHz frequency ranges …
Design of a Broadband Low-Noise Amplifier Operating at 8-10 GHz with High Gain and Favorable Gain Flatness
J Deng, J Qin, P Wei, W Zhang - 2023 IEEE 6th International …, 2023 - ieeexplore.ieee.org
A broadband low-noise amplifier (LNA) designed for the 8-10GHz wireless communication
frequency range was developed based on the 180nm CMOS process. The overall circuit …
frequency range was developed based on the 180nm CMOS process. The overall circuit …
[PDF][PDF] A Variable-Gain Low-Noise Amplifier for MedRadio Band Applications
MA Mubin, MT Mustaffa, A Marzuki - ijeetc.com
A variable-gain 0.18 µm Complementary Metal-Oxide-Semiconductor (CMOS) Low-Noise
Amplifier (LNA) for Medical Device Radiocommunications Service (MedRadio) applications …
Amplifier (LNA) for Medical Device Radiocommunications Service (MedRadio) applications …
The Presentation of a Low Noise UWB Amplifier Using an Inverter with Inductive Peaking Technique
M Bekrani, MM Taskhiri, SA Asayesh - Applied Electromagnetics, 2022 - elemag.ihu.ac.ir
In this paper, a 3.1 to 10.6 GHz low noise amplifier is designed using the 130 nm CMOS
technology. In this circuit, the source degeneration technique is employed to increase the …
technology. In this circuit, the source degeneration technique is employed to increase the …
تقویت‌کننده کم‌نویز فراپهن باند با استفاده از تکنیک معکوس‌کننده با پیک‌زنی القایی
بکرانی, تسخیری, آسایش - الکترومغناطیس کاربردی, 2022 - elemag.ihu.ac.ir
در این مقاله، یک تقویت‌کننده کم‌نویز در باند فرکانسی فراپهن GHz 3/1-10/6 با استفاده از
تکنولوژی CMOS 130 nm طراحی شده است. در این مدار از تکنیک سورس تبهگنی برای گسترش …
تکنولوژی CMOS 130 nm طراحی شده است. در این مدار از تکنیک سورس تبهگنی برای گسترش …