III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

We review different strategies to achieve a three-dimensional energy bandgap modulation
in a nanowire (NW) by the introduction of self-assembled 0D, 1D and 2D quantum …

Quantum dots embedded within nanowires represent one of the most promising
technologies for applications in quantum photonics. Whereas the top-down fabrication of …

We develop a quantitative model of the self-catalyzed vapor-liquid-solid growth of GaAs
nanowires, that depends on only a few a priori unknown physical parameters. The model is …

A method for the direct correlation at the nanoscale of structural and optical properties of
single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires …

We identify a new noncatalytic growth regime for molecular beam epitaxially grown GaAs
nanowires (NWs) that may provide a route toward axial heterostructures with discrete …

Semiconductor nanowires composed of III–V materials have enormous potential to add new
functionality to electronics and optical applications. However, integration of these promising …

InAs quantum dot arrays are obtained on GaAs nanowire facets by molecular beam epitaxy.
The GaAs nanowires are first grown by the gallium-assisted catalyst-free method …

Controlling the composition of ternary III-V and III-nitride nanomaterials such as vertical
nanowires, horizontal nanowires, nanosheets, and nanomembranes grown by different …

Free‐standing ternary InGaAs nanowires (NW) are at the core of intense investigations due
to their integration capabilities on silicon (Si) for next‐generation photovoltaics, integrated …