A back-end-of-line compatible 400° C thermally robust perpendicular spin-orbit torque
magnetic tunnel junction (p-SOT-MTJ) memory cell with a tunnel magnetoresistance ratio of …

Antiferromagnetic (AFM) materials have attracted attention for device applications due to the
absence of the stray field and high-frequency response. To integrate AFM materials into …

FeNi3 nanoparticles were synthesized using chemical reduction, with FeCl2. 4H2O and
NiCl2. 6H2O as starting materials, and N2H4. H2O as the reduction agent. FeNi3-C60 core …

Magnetic thin films with fast magnetization switching and low Gilbert damping are crucial for
devices working at high frequency with low power consumption. In this work, composition …

This study investigated the ultrathin Cu (002) capping nano-island effects on the magnetic
characterizations and microstructure of epitaxial FePt (001) films directly fabricated on MgO …

Single‐crystalline antiferromagnetic artificially layered [Ni/Mn] films of different thicknesses,
covered by ferromagnetic Co layers, are deposited on Cu 3 Au (001). Their structural and …

Creation of FeNi-based hard magnetic materials for a high-density recording media
depends on many factors including chemistry, synthesis conditions and subsequent heat …

This thesis provides a comprehensive account of my research carried out in collaboration
with the Max-Plank-Institute in Düsseldorf at the Institute of Applied Physics. The study is …