We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier
Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic …

We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-
Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with …

Waveguide uni-traveling-carrier photodiodes (UTC-PDs) have been fabricated and tested.
Output saturation currents greater than 40 mA at 1 GHz are demonstrated for a 10 …

We present the first 40-Gb/s widely tunable electroabsorption modulator (EAM)-based
transmitters. The sampled-grating Distributed Bragg Reflector (SG-DBR) laser/EAM devices …

We present the first monolithic widely tunable 40-Gb/s transceivers. The devices integrate
sampled grating distributed Bragg reflector (SG-DBR) lasers, quantum-well …

The design and fabrication of an evanescently coupled waveguide InGaAs unitraveling-
carrier photodiode (PD) are presented. Through doping the InGaAs absorption layer …

Photodiodes (PDs) which convert optical signals to electrical signals have been widely used
in many fields. In contrast to pin PDs, in uni-traveling carrier (UTC) PDs, the absorption layer …

The coming era of Big Data and Internet of Things has created a soaring demand for data
traffic in computers, data-centers, and mobile networks. It appears more and more …

Photonic receivers integrating unitravelling carrier (UTC) photodiodes with high saturation
power/high gain semiconductor optical amplifiers (SOAs) are presented. The SOAs …

We demonstrate an InP-based high-speed monolithic PIN photodetector (PD) integrated
with a multi-quantum well semiconductor optical amplifier (SOA). A butt-joint scheme is …