Ferroelectric transistors for memory and neuromorphic device applications
Ferroelectric materials have been intensively investigated for high‐performance nonvolatile
memory devices in the past decades, owing to their nonvolatile polarization characteristics …
memory devices in the past decades, owing to their nonvolatile polarization characteristics …
Neuromorphic devices based on fluorite‐structured ferroelectrics
A continuous exponential rise has been observed in the storage and processing of the data
that may not curtail in the foreseeable future. The required data processing speed and …
that may not curtail in the foreseeable future. The required data processing speed and …
A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance
Ferroelectric hafnium oxides are poised to impact a wide range of microelectronic
applications owing to their superior thickness scaling of ferroelectric stability and …
applications owing to their superior thickness scaling of ferroelectric stability and …
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …
much attention due to their technological potential in terms of scalability, high-speed, and …
Review on the microstructure of ferroelectric hafnium oxides
Ferroelectric hafnium oxide is of major interest for a multitude of applications in
microelectronics, ranging from neuromorphic devices to actuators and sensors. While the …
microelectronics, ranging from neuromorphic devices to actuators and sensors. While the …
Comprehensive variability analysis in dual-port fefet for reliable multi-level-cell storage
HfO 2-based FeFET is a remarkably promising candidate among emerging memory
technologies. Its manifold applications range from nonvolatile memory to neuromorphic …
technologies. Its manifold applications range from nonvolatile memory to neuromorphic …
Influence of annealing temperature on the structural and electrical properties of Si-doped ferroelectric hafnium oxide
The ferroelectric properties of hafnium oxide films are strongly influenced by the
crystallization process due to the interaction of thermodynamics, kinetics, and mechanical …
crystallization process due to the interaction of thermodynamics, kinetics, and mechanical …
Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications
Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
Low voltage and high speed 1Xnm 1T1C FE-RAM with ultra-thin 5nm HZO
M Sung, K Rho, J Kim, J Cheon, K Choi… - 2021 IEEE …, 2021 - ieeexplore.ieee.org
World-first 1Xnm half-pitch FE-RAM with 8Gb density was fabricated, and operation was
confirmed. The conventional FE-RAM maximizes 2Pr by adjusting the capacitor plate …
confirmed. The conventional FE-RAM maximizes 2Pr by adjusting the capacitor plate …
Polarization Pruning: Reliability Enhancement of Hafnia‐Based Ferroelectric Devices for Memory and Neuromorphic Computing
Ferroelectric (FE) materials are key to advancing electronic devices owing to their non‐
volatile properties, rapid state‐switching abilities, and low‐energy consumption. FE‐based …
volatile properties, rapid state‐switching abilities, and low‐energy consumption. FE‐based …