Low VπLπ and Driving Voltage Interleaved Silicon Phase Shifter for Modulation Applications

A Begović, YH Kim, L Jiang, S Anderson… - IEEE Photonics …, 2022 - ieeexplore.ieee.org
Interleaved doped Mach-Zehnder Modulators (MZMs) are one solution to attaining higher
modulation efficiencies compared with lateral junction structures, due to greater modal …

140 Gb/s serializer using clock doublers in 90 nm SiGe technology

R Clarke, MR LeRoy, S Raman… - IEEE Journal of Solid …, 2015 - ieeexplore.ieee.org
Many design challenges exist in achieving high frequency clocking for high-speed
applications. This paper describes a new clock distribution technique and clocking approach …

High-speed reconfigurable circuits for multirate systems in SiGe HBT technology

MR LeRoy, S Raman, M Chu, JW Kim… - Proceedings of the …, 2015 - ieeexplore.ieee.org
In this paper, we discuss the advantages and opportunities presented by high-speed (> 50
GHz) reconfigurable integrated circuits and how they may drive reconfigurable systems …

Ultrashort SiGe heterojunction bipolar transistor-based high-speed optical modulator

P Wu, RE Clarke, J Novak, S Deng… - IEEE Journal of …, 2012 - ieeexplore.ieee.org
A graded base SiGe HBT optical modulator has high-speed, high optical modulation
efficiency, small footprint. In this paper, we present our work in the design and modeling of …

Design of a 250-Gbit/s SiGe HBT electrooptic modulator

TG Neogi, G Niu, D Connelly, JD Cressler… - IEEE Photonics …, 2011 - ieeexplore.ieee.org
We present a rigorous electrical and optical analysis of a highly scaled, graded-base, SiGe
heterojunction bipolar transistor (HBT) electrooptic (EO) modulator. In this study, we propose …

Monolithic integrated silicon photonic interconnect with perfectly vertical coupling optical interface

Z Zhang, B Huang, Z Zhang, C Cheng… - IEEE Photonics …, 2013 - ieeexplore.ieee.org
We proposed and demonstrated a point-to-point photonic interconnect based on a perfectly
vertical grating coupler. This bidirectional grating plays double roles of coupling and splitting …

Design of an integrated high-speed HBT-based electroabsorption modulator and driver in SiGe BiCMOS technology

E Fu, VJ Koomson, P Wu, S Deng… - 2012 IEEE 55th …, 2012 - ieeexplore.ieee.org
Monolithic optoelectronic integrated circuits are a primary focus of research for high-speed
optical communication system development. Standard silicon processes provide a cost …

Short SiGe HBT electro-absorption modulator

P Wu, S Deng, ZR Huang - IEEE Photonics Conference 2012, 2012 - ieeexplore.ieee.org
Short SiGe HBT electro-absorption modulator Page 1 Short SiGe HBT Electro-Absorption
Modulator Pengfei Wu, Shengling Deng, Z. Rena Huang Electrical, Computer, and Systems …

[PDF][PDF] Design of a 250-Gbit/s SiGe HBT Electrooptic Modulator

D Connelly - 2011 - sites.ecse.rpi.edu
We present a rigorous electrical and optical analysis of a highly scaled, gradedbase, SiGe
heterojunction bipolar transistor (HBT) electrooptic (EO) modulator. In this study, we propose …

[图书][B] Design of a High-Speed and Compact Electro-Optic Modulator using Silicon-Germanium HBT

TG Neogi - 2011 - search.proquest.com
Optical interconnects between electronics systems have attracted significant attention and
development for a number of years because optical links have demonstrated potential …