Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier
JS Bae, J Lee, HJ Kim, IG Baek, Y Ha - US Patent 7,352,021, 2008 - Google Patents
Abstract Magnetic Random Access Memory (MRAM) devices include a lower electrode and
a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a …
a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a …
Precessional spin current structure for MRAM
MM Pinarbasi, M Tzoufras - US Patent 9,853,206, 2017 - Google Patents
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a
magnetic tunnel junction stack having a significantly improved performance of the free layer …
magnetic tunnel junction stack having a significantly improved performance of the free layer …
Method for manufacturing high density non-volatile magnetic memory
RK Malmhall, K Satoh, J Zhang, P Keshtbod… - US Patent …, 2014 - Google Patents
Methods of fabricating MTJ arrays using two orthogonal line patterning steps are described.
Embodiments are described that use a self-aligned double patterning method for one or …
Embodiments are described that use a self-aligned double patterning method for one or …
Spin transfer torque structure for MRAM devices having a spin current injection capping layer
BA Kardasz, MM Pinarbasi - US Patent 9,728,712, 2017 - Google Patents
A magnetoresistive random-access memory (MRAM) device is disclosed. The device
described herein has a spin current injection capping layer between the free layer of a …
described herein has a spin current injection capping layer between the free layer of a …
Memory cell having magnetic tunnel junction and thermal stability enhancement layer
M Pinarbasi, B Kardasz - US Patent 9,741,926, 2017 - Google Patents
(57) ABSTRACT A magnetoresistive random-access memory (MRAM) device is disclosed.
The device described herein has a thermal stability enhancement layer over the free layer of …
The device described herein has a thermal stability enhancement layer over the free layer of …
Precessional spin current structure with non-magnetic insertion layer for MRAM
BA Kardasz, MM Pinarbasi - US Patent 10,665,777, 2020 - Google Patents
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a
magnetic tunnel junction stack having a significantly improved performance of the free layer …
magnetic tunnel junction stack having a significantly improved performance of the free layer …
Precessional spin current structure with high in-plane magnetization for MRAM
MM Pinarbasi, BA Kardasz - US Patent 10,672,976, 2020 - Google Patents
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a
magnetic tunnel junction stack having a significantly improved performance of the free layer …
magnetic tunnel junction stack having a significantly improved performance of the free layer …
Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devices
R Belen, R Xiao, T Zhong, W Kula, CJ Torng - US Patent 8,722,543, 2014 - Google Patents
(57) ABSTRACT A composite hard mask is disclosed that prevents build up of metal etch
residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ …
residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ …
Method for manufacturing MTJ memory device
M Pinarbasi - US Patent 9,263,667, 2016 - Google Patents
(57) ABSTRACT A method for manufacturing MTJ pillars for a MTJ memory device. The
method includes depositing multiple MTJ layers on a Substrate, depositing a hard mask on …
method includes depositing multiple MTJ layers on a Substrate, depositing a hard mask on …
Method for manufacturing MTJ memory device
M Pinarbasi - US Patent 9,406,876, 2016 - Google Patents
(51) Int. Cl. A method for manufacturing MTJ pillars for a MTJ memory HOIL 29/82(2006.01)
device. The method includes depositing multiple MTJ layers HOIL 43/12(2006.01) on a …
device. The method includes depositing multiple MTJ layers HOIL 43/12(2006.01) on a …