The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films
P Papakonstantinou, JF Zhao, P Lemoine… - Diamond and related …, 2002 - Elsevier
Silicon-doped diamond-like carbon (DLC) films with a Si content of up to 20.2 at.% were
grown on Al2O3–TiC substrate by plasma-enhanced chemical vapour deposition. The …
grown on Al2O3–TiC substrate by plasma-enhanced chemical vapour deposition. The …
Deposition of Si-DLC films with high hardness, low stress and high deposition rates
JC Damasceno, SS Camargo Jr, FL Freire Jr… - Surface and Coatings …, 2000 - Elsevier
In this work silicon-incorporated diamond-like carbon (Si-DLC) films were produced by
plasma enhanced chemical vapor deposition (PECVD) from gaseous mixtures of CH4 and …
plasma enhanced chemical vapor deposition (PECVD) from gaseous mixtures of CH4 and …
In-situ thermal stability analysis of amorphous Si-doped carbon films
Doping enhances diamond like carbon (DLC) coatings for extreme high-temperature
applications. However, understanding the enhancement mechanism is elusive. This study …
applications. However, understanding the enhancement mechanism is elusive. This study …
Quantitative analysis of hydrogenated diamondlike carbon films by visible Raman spectroscopy
The correlations between properties of hydrogenated diamondlike carbon films and their
Raman spectra have been investigated. The films are prepared by plasma deposition …
Raman spectra have been investigated. The films are prepared by plasma deposition …
Properties of amorphous carbon–silicon alloys deposited by a high plasma density source
B Racine, AC Ferrari, NA Morrison… - Journal of applied …, 2001 - pubs.aip.org
The addition of silicon to hydrogenated amorphous carbon can have the advantageous
effect of lowering the compressive stress, improving the thermal stability of its hydrogen, and …
effect of lowering the compressive stress, improving the thermal stability of its hydrogen, and …
Superlow friction behavior of Si-doped hydrogenated amorphous carbon film in water environment
F Zhao, HX Li, L Ji, YF Mo, WL Quan, W Du… - Surface and coatings …, 2009 - Elsevier
Si-doped hydrogenated amorphous carbon (aC: H: Si) film was prepared using hybrid radio
frequency plasma-enhanced chemical vapor deposition (RF PECVD) and non-balanced …
frequency plasma-enhanced chemical vapor deposition (RF PECVD) and non-balanced …
Spectroscopic investigation of thermally induced structural evolution of aC: H: Si film
Temperature-induced evolution of Si-doped hydrogenated amorphous carbon films on
Silicon was monitored using Raman, X-ray photoelectron spectroscopy (XPS) with depth …
Silicon was monitored using Raman, X-ray photoelectron spectroscopy (XPS) with depth …
Relationship between bonding structure and mechanical properties of amorphous carbon containing silicon
Unhydrogenated amorphous carbon films with different silicon concentrations were
synthesized by magnetron sputtering, and the corresponding evolution of inter-atomic …
synthesized by magnetron sputtering, and the corresponding evolution of inter-atomic …
Structural, mechanical and tribological characterizations of aC: H: Si films prepared by a hybrid PECVD and sputtering technique
F Zhao, HX Li, L Ji, YF Mo, WL Quan… - Journal of Physics D …, 2009 - iopscience.iop.org
Abstract aC: H: Si films were prepared under different CH 4/Ar ratios by a hybrid radio
frequency plasma-enhanced chemical vapour deposition (RFPECVD) and unbalanced …
frequency plasma-enhanced chemical vapour deposition (RFPECVD) and unbalanced …
Optical characterization of wide band gap amorphous semiconductors Effect of hydrogen dilution
M Park, CW Teng, V Sakhrani, MB McLaurin… - Journal of Applied …, 2001 - pubs.aip.org
The effect of hydrogen dilution on the optical properties of a wide band gap amorphous
semiconductor (a-Si: C: H) was investigated. The samples were prepared by glow discharge …
semiconductor (a-Si: C: H) was investigated. The samples were prepared by glow discharge …