A design TCADAS tool for semiconductor devices and case study of 65 nm conventional floating-gate MOS transistor
TD Cong, T Hoang - Heliyon, 2024 - cell.com
An automatic programming tool has become an essential component in virtual fabrication in
recent years. This paper aims to propose a methodology of virtual fabrication for …
recent years. This paper aims to propose a methodology of virtual fabrication for …
Electron transport mechanism through ultrathin Al2O3 films grown at low temperatures using atomic–layer deposition
P Ma, W Guo, J Sun, J Gao, G Zhang… - Semiconductor …, 2019 - iopscience.iop.org
Abstract Alumina (Al 2 O 3) films of different thicknesses have been grown at different low
temperatures (100 C–250 C) by atomic–layer deposition on n–type Si substrate. The …
temperatures (100 C–250 C) by atomic–layer deposition on n–type Si substrate. The …
[HTML][HTML] A simulated fabrication and characterization of a 65 nm floating-gate MOS transistor☆
TD Cong, PTT Bao, T Hoang - Ain Shams Engineering Journal, 2023 - Elsevier
The aim of this study was to virtual fabricate and characterize a Floating-gate MOS transistor
of the 65 nm process. The fabrication process was designed and characterized using the …
of the 65 nm process. The fabrication process was designed and characterized using the …
[HTML][HTML] Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel
The continuous scaling down of MOSFETs is one of the present trends in semiconductor
devices to increase device performance. Nevertheless, with scaling down beyond 22 nm …
devices to increase device performance. Nevertheless, with scaling down beyond 22 nm …
Floating gate potential of gate-all-around floating gate memory cell: parameter extraction and compact model
The compact modeling of flash memories is crucial for integrated circuit designers to carry
out efficient and precise circuit-level evaluations, particularly in the case of 3D NAND flash …
out efficient and precise circuit-level evaluations, particularly in the case of 3D NAND flash …
Exploration and analysis of n-FinFET implementing stacked high-K at 08 nm gate length
FinFETs ensured the continuation of semiconductor industry with reliable, high performance
and low power devices fabricated at sub-100 nm technology nodes. These FinFETs are able …
and low power devices fabricated at sub-100 nm technology nodes. These FinFETs are able …
Molecular/Nanostructured Functional Metal Oxide Stacks for Nanoscale Nanosecond Information Storage
A Balliou, D Skarlatos… - Advanced Functional …, 2019 - Wiley Online Library
The metal oxide heterostructures market is exponentially growing, adhering to the trend of
achieving fabrication versatility on a vast range of nonconventional electromagnetic and …
achieving fabrication versatility on a vast range of nonconventional electromagnetic and …
Design and Performance Analysis of 3-Fin 08 nm Physical Gate Length SOI FinFETs Employing Gate Stacked High-K Dielectrics
The continuation of the scaling of FinFETs in the nano regime guaranteed the continuance
of semiconductor industry with the fabrication of reliable, high performance and low power …
of semiconductor industry with the fabrication of reliable, high performance and low power …
N2 gas flow rate dependence on the high-k LaB x N y thin film characteristics formed by RF sputtering for floating-gate memory applications
KE Park, H Kamata, S Ohmi - Japanese Journal of Applied …, 2021 - iopscience.iop.org
In this paper, the N 2 gas flow rate dependence on the high-k LaB x N y thin film
characteristics formed by RF sputtering for floating-gate memory applications was …
characteristics formed by RF sputtering for floating-gate memory applications was …
[PDF][PDF] Optimization of high-k composite dielectric materials of variable oxide thickness tunnel barrier for nonvolatile memory
Downscaling the tunnel oxide thickness has become one of the innovative solutions to
minimize the operational voltage with better the programming/erasing (P/E) operation time …
minimize the operational voltage with better the programming/erasing (P/E) operation time …