Self-organized micro-light-emitting diode structure for high-speed solar-blind optical wireless communications
The origin of the fast modulation characteristics of deep ultraviolet (DUV) AlGaN light-
emitting diodes (LEDs) grown on AlN/sapphire templates with vicinal off-angles is reported …
emitting diodes (LEDs) grown on AlN/sapphire templates with vicinal off-angles is reported …
Cascaded deep ultraviolet light-emitting diode via tunnel junction
The AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) is an alternative DUV
light source to replace traditional mercury-based lamps. However, the state-of-the-art DUV …
light source to replace traditional mercury-based lamps. However, the state-of-the-art DUV …
Dual-peak electroluminescence spectra generated from Al n/12Ga1-n/12N (n= 2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells
Y Nagasawa, K Kojima, A Hirano… - Journal of Physics D …, 2022 - iopscience.iop.org
The metastability of Al n/12 Ga 1-n/12 N (n= 2, 3, and 4) was investigated by the statistical
analysis of electroluminescence (EL) spectra having dual peaks with a peak-to-peak …
analysis of electroluminescence (EL) spectra having dual peaks with a peak-to-peak …
Detailed analysis of Ga-rich current pathways created in an n-Al0. 7Ga0. 3N layer grown on an AlN template with dense macrosteps
Y Nagasawa, A Hirano, M Ippommatsu… - Applied Physics …, 2020 - iopscience.iop.org
To clarify the behavior of the AlGaN in 20 nm wide Ga-rich current pathways in an n-AlGaN
layer, which assists carrier localization in AlGaN-based light-emitting diodes, we performed …
layer, which assists carrier localization in AlGaN-based light-emitting diodes, we performed …
Direct demonstration of carrier distribution and recombination within step-bunched UV-LEDs
H Xu, J Jiang, L Chen, J Hoo, L Yan, S Guo… - Photonics …, 2021 - opg.optica.org
AlGaN-based solid state UV emitters have many advantages over conventional UV sources.
However, UV-LEDs still suffer from numerous challenges, including low quantum efficiency …
However, UV-LEDs still suffer from numerous challenges, including low quantum efficiency …
Deep ultraviolet emission from multiple quantum wells on flat N-polar AlN templates fabricated using periodical pulsed H2 etching
N Okada, R Sakamoto, K Ataka, T Ito… - Japanese Journal of …, 2021 - iopscience.iop.org
In a previous study, we successfully grew flat N-polar AlN layers on a c-plane sapphire
substrate with a misorientation angle of 2.0 by metal-organic vapor phase epitaxy. However …
substrate with a misorientation angle of 2.0 by metal-organic vapor phase epitaxy. However …
Discrete AlN mole fraction of n/12 (n= 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire …
Y Nagasawa, A Hirano, M Ippommatsu… - Journal of Applied …, 2021 - pubs.aip.org
Ga-rich zones created along macrosteps in n-AlGaN plausibly function as electron pathways
of AlGaN-based deep-ultraviolet (DUV) LEDs fabricated on AlN templates using 1.0-miscut c …
of AlGaN-based deep-ultraviolet (DUV) LEDs fabricated on AlN templates using 1.0-miscut c …
Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells
Y Nagasawa, K Kojima, A Hirano, H Sako… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract When nonflat Al x Ga 1− x N quantum wells (QWs) for producing 285 nm light
emitting diodes (LEDs) were fabricated on n-AlGaN on AlN templates with dense …
emitting diodes (LEDs) were fabricated on n-AlGaN on AlN templates with dense …
Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga2O3
R Sugie, T Uchida, A Hashimoto, S Akahori… - Applied Physics …, 2020 - iopscience.iop.org
Low-energy cross-sectional cathodoluminescence (CL) with a beam energy of 1 keV was
applied to Si-ion-implanted β-Ga 2 O 3 (− 201) wafers to investigate implantation damage …
applied to Si-ion-implanted β-Ga 2 O 3 (− 201) wafers to investigate implantation damage …
Depth Distribution of Defects in SiC PiN Diodes Formed Using Ion Implantation or Epitaxial Growth
S Fukaya, Y Yonezawa, T Kato… - physica status solidi (b …, 2022 - Wiley Online Library
In the development of 4H‐SiC bipolar devices, defect generation during the fabrication
process is an important issue for maintaining a long carrier lifetime in the drift layers. Herein …
process is an important issue for maintaining a long carrier lifetime in the drift layers. Herein …