Positron annihilation in semiconductors: defect studies

R Krause-Rehberg, HS Leipner - 1999 - books.google.com
The subject of this book is the investigation of lattice imperfections in semiconductors by
means of positron annihilation. A comprehensive review is given of the different positron …

Electronic defects in : Towards a comprehensive model

C Spindler, F Babbe, MH Wolter, F Ehré… - Physical Review …, 2019 - APS
The electronic defects in any semiconductor play a decisive role for the usability of this
material in an optoelectronic device. Electronic defects determine the doping level as well as …

Electronic properties of Cu (In, Ga) Se2 heterojunction solar cells–recent achievements, current understanding, and future challenges

U Rau, HW Schock - Applied Physics A, 1999 - Springer
The recent achievements of high-efficiency Cu (In, Ga) Se 2 heterojunction solar cells are
reviewed with a special focus on the understanding of the electronic transport properties of …

Stability Issues of Cu(In,Ga)Se2-Based Solar Cells

JF Guillemoles, L Kronik, D Cahen, U Rau… - The Journal of …, 2000 - ACS Publications
Stability aspects of the Mo/Cu (In, Ga) Se2/CdS/ZnO solar cell are reviewed and assessed.
These include (i) the chemical stability of the various interfaces present in the device,(ii) the …

Cu(In,Ga)Se2 Solar Cells: Device Stability Based on Chemical Flexibility

JF Guillemoles, U Rau, L Kronik, HW Schock… - Advanced …, 1999 - Wiley Online Library
Is “self‐healing” the source of the stability of Cu (In, Ga) Se2‐based solar modules? The
proven remarkable stability and radiation hardness of Cu (In, Ga) Se2 (CIGS) solar cells …

Influence of the BaTiO3 addition to K0. 5Na0. 5NbO3 lead-free ceramics on the vacancy-like defect structure and dielectric properties

AP Espinosa, L Ramajo, F Rubio-Marcos… - Journal of the European …, 2021 - Elsevier
A study on the induced changes in the vacancy-like defect structure and the dielectric
properties of K 0.5 Na 0.5 NbO 3 ceramics by the addition of different amounts, between 0 …

Radiation resistance of Cu (In, Ga) Se2 solar cells under 1-MeV electron irradiation

A Jasenek, U Rau, K Weinert, IM Kötschau, G Hanna… - Thin Solid Films, 2001 - Elsevier
Polycrystalline ZnO/CdS/Cu (In, Ga) Se2 heterojunction solar cells display a very high
radiation resistance under 1-MeV electrons. We irradiated high-efficiency Cu (In, Ga) Se2 …

Stability of Cu (In, Ga) Se2 solar cells: a thermodynamic approach

JF Guillemoles - Thin Solid Films, 2000 - Elsevier
Cu (In, Ga) Se2 (CIGS) based photovoltaic cells have demonstrated the highest solar energy
conversion efficiencies ever for thin film devices. They also exhibit excellent stability in field …

Formation, migration, and clustering of point defects in CuInSe2 from first principles

LE Oikkonen, MG Ganchenkova… - Journal of Physics …, 2014 - iopscience.iop.org
The electronic properties of high-efficiency CuInSe 2 (CIS)-based solar cells are affected by
the microstructural features of the absorber layer, such as point defect types and their …

Role of Se vacancies on Shubnikov-de Haas oscillations in Bi2Se3: A combined magneto-resistance and positron annihilation study

TR Devidas, EP Amaladass, S Sharma… - Europhysics …, 2015 - iopscience.iop.org
Magneto-resistance measurements coupled with positron lifetime measurements, to
characterize the vacancy-type defects, have been carried out on the topological insulator (TI) …