Temperature dependent “S-shaped” photoluminescence behavior of InGaN nanolayers: optoelectronic implications in harsh environment
Temperature-dependent photoluminescence measurements are reported for n+-and n-type
InGaN nanolayers grown by plasma-assisted molecular beam epitaxy (PAMBE) on AlN/n-Si …
InGaN nanolayers grown by plasma-assisted molecular beam epitaxy (PAMBE) on AlN/n-Si …
Investigation of high indium-composition InGaN/GaN heterostructures on ZnO grown by metallic organic chemical vapor deposition
M Tian, YD Qian, C Zhang, L Li, SD Yao… - Optical Materials …, 2018 - opg.optica.org
The optical properties and film quality for a series of high-In composition InGaN films grown
on ZnO substrate by metal-organic chemical vapor deposition (MOCVD) are characterized …
on ZnO substrate by metal-organic chemical vapor deposition (MOCVD) are characterized …
Enhancement of Photoresponsivity of β-In2S3/Si Broadband Photodetector by Decorating With Reduced-Graphene Oxide
Silicon-based conventional photodetectors have always been a vital part of many electronic
and optoelectronic circuits because of their low fabrication cost, high device performance …
and optoelectronic circuits because of their low fabrication cost, high device performance …
Investigations on morphology, growth mode and indium incorporation in MOCVD grown InGaN/n-GaN heterostructures
InGaN layers were grown on n-GaN/GaN/sapphire template using metal organic chemical
vapor deposition system by varying Indium (In) flow rate as 11, 13 and 14 μmol/min. The …
vapor deposition system by varying Indium (In) flow rate as 11, 13 and 14 μmol/min. The …
Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition
Y Zhang, Z Wang, S Xu, W Bao, T Zhang… - Materials Research …, 2018 - Elsevier
Abstract High-quality AlGaN/InGaN heterostructures are grown and the effects of InGaN
channel thickness on the structure and transport properties are investigated. With the …
channel thickness on the structure and transport properties are investigated. With the …
Dependence of defect structure on In concentration in InGaN epilayers grown on AlN/Si (111) substrate
InGaN epilayers with different indium concentrations have been grown on a 100-nm-thick
AlN/n-Si (111) template using plasma assisted molecular beam epitaxy. The sample with the …
AlN/n-Si (111) template using plasma assisted molecular beam epitaxy. The sample with the …
Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications'
III-Nitride-based heterostructures are well suited for the fabrication of various optoelectronic
devices such as light-emitting diodes (LEDs), laser diodes (LDs), high-power/-high …
devices such as light-emitting diodes (LEDs), laser diodes (LDs), high-power/-high …
Influence of InGaN interlayer thickness on GaN layers grown by metal organic chemical vapour deposition
InGaN interlayer was grown between GaN layers on sapphire substrate using metal organic
chemical vapour deposition. The crystalline quality of the sample was investigated using …
chemical vapour deposition. The crystalline quality of the sample was investigated using …
[PDF][PDF] Dependence of defect structure on In concentration in InGaN epilayers grown on AlN/Si (111) substrate1
KK Nanda, SB Krupanidhi - 2022 - scholar.archive.org
InGaN epilayers with different indium concentrations have been grown on a 100-nm-thick
AlN/n-Si (111) template using plasma assisted molecular beam epitaxy. The sample with the …
AlN/n-Si (111) template using plasma assisted molecular beam epitaxy. The sample with the …
Photoresponse characteristics of p-Si/n-CuxIn1− xO heterojunction diode prepared by sol-gel spin coating
K Mageshwari, J Park - Materials Science in Semiconductor Processing, 2016 - Elsevier
In the present work, we report on the fabrication and detailed electrical characterization of p-
Si/n-Cu x In 1− x O heterojunction prepared via the deposition of nanocrystalline Cu x In 1− x …
Si/n-Cu x In 1− x O heterojunction prepared via the deposition of nanocrystalline Cu x In 1− x …