There is currently much activity toward the integration of mid-infrared semiconductor lasers
on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics …

The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …

The efficiency in modern technologies and green energy solutions has boiled down to a
thermal engineering problem on the nanoscale. Due to the magnitudes of the thermal mean …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

Monolithic integration of III-V on silicon has been a scientifically appealing concept for
decades. Notable progress has recently been made in this research area, fueled by …

In 1989, one author of this paper (AR) published the very first review paper on InAsSb
infrared detectors. During the last thirty years, many scientific breakthroughs and …

The authors report an enhanced infrared spectral response of GaAs-based solar cells that
incorporate type II GaSb quantum dots (QDs) formed using interfacial misfit array growth …

Combination of mismatched materials in semiconductor nanowire heterostructures offers a
freedom of bandstructure engineering that is impossible in standard planar epitaxy …

Systematically discusses the growth method, material properties, and applications for key
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …

The manuscript reports that the initial strain relaxation of highly mismatched GaSb layers
grown on GaAs (001) is governed by the two-dimensional (2D), periodic interfacial misfit …