Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high
power and high frequency applications. However, the existence of damages, defects and …

A complete solution from parameter extraction to large-signal electrothermal model
generation for gallium nitride (GaN) HEMTs is presented in this paper with the consideration …

Because of charge trapping in GaN HEMTs, dc characteristics of these devices are not
representative of high-frequency operation. The advanced spice model GaN model …

This review presents a concise overview of RF (radio frequency) power transistor behavior
models, which is crucial for optimizing RF performance in high-frequency applications like …

This paper presents an efficient artificial neural network (ANN) electrothermal modeling
approach applied to GaN devices. The proposed method is based on decomposing the …

Neural network-based capacitance models are accurate, but some of them are not charge-
conservative. In this work, a novel consistent gate charge model for GaN high electron …

The purpose of this invited paper is to give readers a comprehensive and critical overview
on how to extract equivalent‐circuit models for GaN HEMTs, which are the preferred devices …

This paper presents a novel empirical model for gallium nitride on silicon carbide high-
electron mobility transistors. A global state-space formulation describes charge trapping …

The asymmetry between capture and release time constants associated with charge-
trapping phenomena observed in the electrical characteristics of microwave gallium-nitride …

This paper describes the performance degradation of RF GaN-on-SiC HEMT switches due
to the charge trapping, which is triggered by high voltages under operating regimes. A …