The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role
in various applications such as adapters, uninterrupted power supplies, smart grids, and …

In CMOS, the channel length is sinking day by day which raises a lot of questions about its
future. Quantum dot computation is an alternative solution to the CMOS technology, which …

We have studied the surface structure of a single crystal β-Ga 2 O 3 (010) using quantitative
Low Energy Electron Diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). The …

This article reports opto-electronic switching properties of heterostructure GaN/AlGaN lateral
Avalanche Transit Time (ATT) diode oscillator. A novel technique has been adopted for the …

A new vertical transistor structure based on GaN nanowire is designed and optimized using
the TCAD-Santaurus tool with an electrothermal model. The studied structure with quasi-1D …

This paper reports power enhancement mode HEMATT diodes optimized for THz switching
applications. This has been achieved by introducing Graphene plates in the cathode region …

This study discusses the application of the substrate voltage during the recovery time with
the dynamic on-resistance (dynamic) method to extract the deep trap states in the buffer …

Ultracapacitors (UCs) are the preferred choice for specific power requirements. Series and
parallel of UCs are required to match the required voltage and power, as the available …

The trend in the development of power converters is focused on efficient systems with high
power density, reliability and low cost. The challenges to cover the new power converters …

Wide-bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride
(GaN) play a critical role in advancing high-power and high-frequency electronic …