Microstructure optimization and optical and interfacial properties modulation of sputtering-derived HfO2 thin films by TiO2 incorporation
TiO 2-doped HfO 2 gate dielectric thin films have been deposited on Si (1 0 0) substrates by
RF sputtering. The component, morphology, structure, optical and interfacial properties of Hf …
RF sputtering. The component, morphology, structure, optical and interfacial properties of Hf …
Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO x RRAM
HfOx-Based resistive random-access memory (RRAM) devices are being widely considered
as both non-volatile memories for digital computation and synaptic memory for …
as both non-volatile memories for digital computation and synaptic memory for …
Development of CVD Ti-containing films
N Jin, Y Yang, X Luo, Z Xia - Progress in materials science, 2013 - Elsevier
Ti-containing films have attracted many interests in last decades due to their specific
properties, and can be used in many applications. Chemical vapor deposition (CVD) is an …
properties, and can be used in many applications. Chemical vapor deposition (CVD) is an …
Maximizing performance for higher K gate dielectrics
J Robertson - Journal of Applied Physics, 2008 - pubs.aip.org
Further scaling of complementary metal oxide semiconductor gate stacks will require gate
dielectrics with a higher dielectric constant (K) than HfO 2. We point out that this will require …
dielectrics with a higher dielectric constant (K) than HfO 2. We point out that this will require …
Theory and Simulation of Metal–Insulator–Semiconductor (MIS) Photoelectrodes
A metal–insulator–semiconductor (MIS) structure is an attractive photoelectrode-catalyst
architecture for promoting photoelectrochemical reactions, such as the formation of H2 by …
architecture for promoting photoelectrochemical reactions, such as the formation of H2 by …
Hafnium zirconate gate dielectric for advanced gate stack applications
RI Hegde, DH Triyoso, SB Samavedam… - Journal of applied …, 2007 - pubs.aip.org
We report on the development of a hafnium zirconate (Hf Zr O 4) alloy gate dielectric for
advanced gate stack applications. The Hf Zr O 4 and hafnium dioxide (Hf O 2) films were …
advanced gate stack applications. The Hf Zr O 4 and hafnium dioxide (Hf O 2) films were …
Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method
VV Atuchin, MS Lebedev, IV Korolkov… - Journal of Materials …, 2019 - Springer
The optical quality Hf x Ti 1− x O 2 films with a wide range of the Hf/Ti ratio were prepared on
Si (100) substrates by the ALD method with the use of tetrakis (ethylmethylamido) hafnium …
Si (100) substrates by the ALD method with the use of tetrakis (ethylmethylamido) hafnium …
Inherently selective water-free deposition of titanium dioxide on the nanoscale: implications for nanoscale patterning
Y Cho, CF Ahles, JY Choi, J Huang, A Jan… - ACS Applied Nano …, 2022 - ACS Publications
Water-free inherent selective deposition of TiO2 on Si and SiO2 in preference to SiCOH has
been studied via atomic layer deposition (ALD) and pulsed chemical vapor deposition …
been studied via atomic layer deposition (ALD) and pulsed chemical vapor deposition …
Sputtered Hf–Ti nanostructures: A segregation and high-temperature stability study
High-temperature stability and segregation tendency of a Hf–Ti alloy is investigated using
specimens sputtered in monolithic and multilayer configurations. Upon annealing at 800° C …
specimens sputtered in monolithic and multilayer configurations. Upon annealing at 800° C …
Inherent selective pulsed chemical vapor deposition of amorphous hafnium oxide/titanium oxide nanolaminates
Water-free Inherent selective pulsed chemical vapor deposition (CVD) of HfO 2/TiO 2
nanolaminates on Si and SiO 2 in preference to SiCOH has been studied. SiCOH is highly …
nanolaminates on Si and SiO 2 in preference to SiCOH has been studied. SiCOH is highly …