[PDF][PDF] Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission
W Liu, Z Li, Z Shi, R Wang, Y Zhu, C Xu - Opto-Electronic Advances, 2021 - researching.cn
Interface emission from heterojunction is a shortcoming for electroluminescent devices. A
buffer layer introduced in the heterojunctional interfaces is a potential solution for the …
buffer layer introduced in the heterojunctional interfaces is a potential solution for the …
Normally-off polycrystalline CH diamond MISFETs with MgF2 gate insulator and passivation
Q He, J Zhang, Z Ren, J Zhang, K Su, Y Lei, D Lv… - Diamond and Related …, 2021 - Elsevier
We report a normally-off Csingle bondH diamond metal-insulator-semiconductor field effect
transistor (MISFET) using a 15-nm-thick thermally evaporated MgF 2 film as both the gate …
transistor (MISFET) using a 15-nm-thick thermally evaporated MgF 2 film as both the gate …
Electrical properties of nanoscale pn heterojunctions formed between a single ZnO nanorod and GaN substrate
S Tiagulskyi, R Yatskiv, H Faitova, Š Kučerová… - Materials Science in …, 2020 - Elsevier
We study electronic transport in single vertically oriented n-type ZnO nanorods on p-type
GaN substrates using a nanoprobe in a scanning electron microscope. The ZnO nanorods …
GaN substrates using a nanoprobe in a scanning electron microscope. The ZnO nanorods …
Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors Fabricated with a MgF2 Passivation Layer
M Oh, JW Yang, H Kim, S Kim, KS Ahn - Journal of the Korean Physical …, 2020 - Springer
Abstract We have demonstrated AlGaN/GaN high-electron-mobility transistors (HEMTs)
fabricated with aMgF 2 passivation layer. Upon MgF 2 passivation using an e-beam …
fabricated with aMgF 2 passivation layer. Upon MgF 2 passivation using an e-beam …
Ag nanoparticle surface-plasmon-resonance-enhanced electroluminescence from semipolar n-ZnO/p-GaN heterojunction light-emitting diodes
X Wang, L Bai, H Zhang, X Su, H Wu… - Applied Physics …, 2018 - iopscience.iop.org
Ag nanoparticles (NPs) were used to demonstrate the surface-plasmon-resonance (SPR)-
enhanced electroluminescence (EL) from semipolar n-ZnO/p-GaN heterojunction light …
enhanced electroluminescence (EL) from semipolar n-ZnO/p-GaN heterojunction light …
Effects of Al diffusion process on the electrical, optical, and structural properties of transparent conducting Al-doped ZnO
The effects of post-thermal diffusion of Al into heavily Al-doped ZnO (AZO) on its electrical,
optical, and structural properties were investigated. Notably, the thermal diffusion of Al led to …
optical, and structural properties were investigated. Notably, the thermal diffusion of Al led to …