The wide applications of wide-bandgap (WBG) devices in power electronics systems bring
benefits in higher switching speed, frequency, and power density, but also cause severe …

The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great
potential for high-power, high-temperature, and high-frequency applications. However, it is …

A half-bridge silicon carbide double-sided cooled power module with integrated decoupling
capacitors for a vertical and smaller commutation loop is designed and developed. The …

The gallium nitride (GaN) power device, with its ultrahigh switching speed and low on-
resistance, has greatly promoted the development of power electronic converters towards …

Coefficients of thermal expansion (CTE) of various materials in packaging structure layers
vary largely, causing significant thermomechanical stress in power electronic packages …

This paper explores two-phase immersion cooling using sealed enclosures of dielectric fluid
as a technique to achieve compact, power dense converters on a single printed circuit board …

In this letter, we demonstrate an enhancement AlGaN/GaN HEMT with a p-type hexagonal
boron nitride (hBN) gate. A major benefit of such a structure is that hBN has a larger …

The paper presents concept and the results of development of novel GaN multi-chip power
micromodule. The GaN multi-chip power micromodule was based on AlN direct bonded …

This thesis presents research into two-phase immersion cooling with Novec 7000 dielectric
fluid in sealed enclosures for power electronic converters on printed circuit board substrates …

This paper presents a new gate-driving profile to mitigate the switching issues caused by
high-speed operation of GaN transistors in on-off transitions. The concept consists of …