The impact of microelectronics on high energy physics innovation: the role of 65 nm CMOS technology on new generation particle detectors
N Demaria - Frontiers in Physics, 2021 - frontiersin.org
The High Luminosity Large Hadron Collider (HL-LHC) at CERN will constitute a new frontier
for the particle physics after the year 2027. Experiments will undertake a major upgrade in …
for the particle physics after the year 2027. Experiments will undertake a major upgrade in …
Ionizing radiation effects in nanoscale CMOS technologies exposed to ultra-high doses
G Borghello - 2019 - air.uniud.it
This thesis studies the effects of radiation in nanoscale CMOS technologies exposed to ultra-
high total ionizing doses (TID), up to 1 Grad (SiO2). These extreme radiation levels are …
high total ionizing doses (TID), up to 1 Grad (SiO2). These extreme radiation levels are …
A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance
SOI junctionless (JL) FinFETs are well-suited for future wireless communication systems;
however, they suffer from the self-heating effect (SHE), which diminishes performance at …
however, they suffer from the self-heating effect (SHE), which diminishes performance at …
Investigation of scaling and temperature effects in total ionizing dose (TID) experiments in 65 nm CMOS
Ten-fold radiation levels are expected in the upgrade of the High-Luminosity Large Hadron
Collider (HL-LHC) at CERN. Bulk silicon CMOS at 65 nm offers appreciable advantages …
Collider (HL-LHC) at CERN. Bulk silicon CMOS at 65 nm offers appreciable advantages …
Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID
G Termo, G Borghello, F Faccio, S Michelis… - Journal of …, 2023 - iopscience.iop.org
The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies
used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring …
used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring …
Reliability of Advanced Nanoscale CMOS Technology for High-Radiation Environments
G Termo - 2024 - infoscience.epfl.ch
Ionizing and non-ionizing radiation is known to cause damages in electronic components,
resulting in reduced performance and possible failure. This is a major issue for any …
resulting in reduced performance and possible failure. This is a major issue for any …
Effects of Ultra-High Total Ionizing Dose in Nanoscale Bulk CMOS Technologies
HD Koch - 2018 - cds.cern.ch
Particle accelerators are an excellent instrument to investigate at the smallest scale in our
universe. The last breakthrough was made by the Large Hadron Collider (LHC) with the …
universe. The last breakthrough was made by the Large Hadron Collider (LHC) with the …
Design of micropower operational transconductance amplifiers for high total ionizing dose effects
The design of radiation-hard analog/mixed signal Integrated Circuits for high Total Ionizing
Dose (TID) is a challenging task. Front-end electronics for the High-Luminosity Large …
Dose (TID) is a challenging task. Front-end electronics for the High-Luminosity Large …
[PDF][PDF] Ultra high-density Hybrid Pixel Sensors for the detection of charged particles
A Paternò - 2019 - core.ac.uk
The LHC complex at CERN is the world's high energy particle accelerator and collider. By
accelerating two beams of protons at near-light speed, it allows the experiments placed …
accelerating two beams of protons at near-light speed, it allows the experiments placed …