The nitrides of most of the group IVb-Vb-VIb transition metals (TiN, ZrN, HfN, VN, NbN, TaN,
MoN, WN) constitute the unique category of conductive ceramics. Having substantial …

In this work, image and fractal analysis of Aluminium doped Titanium Nitride (Ti, Al) N thin
films deposited by direct current (DC)/radio frequency (RF) magnetron sputtering is reported …

The addition of silicon to the widely used aluminum-containing transition metal nitrides is
promising for the synthesis of hard and thermally stable films with good oxidation resistance …

The phase stability of M n+ 1 AX n phase (⁠ M⁠: early transition metal, A⁠: A-group
element, and X⁠: C and∕ or N) Ti 2 Al N thin films reactively sputtered onto MgO (111) and …

Abstract Substituting Al for Ti in TiN (001), TiN (011), and N-and Ti-terminated TiN (111)
surfaces has significant effects on adatom surface energetics which vary strongly with the …

The nucleation and growth of Ti 2 AlN thin films on MgO (111) substrates during dual direct
current reactive magnetron cosputtering from Ti and Al targets in an Ar∕ N 2 atmosphere at …

We use metastable NaCl-structure Ti 0.5 Al 0.5 N alloys to probe effects of configurational
disorder on adatom surface diffusion dynamics which control phase stability and …

Thin films of the M n+ 1 AX n (MAX) phase (⁠ M⁠: early transition metal; A: A-group element;
X⁠: C and/or N; n= 1–3⁠) Ti 2 Al N were epitaxially grown onto single-crystal MgO (111) and …

Single-phase cubic Ti1− xAlxN thin films with high Al content are preferred in industrial
applications as they combine superior mechanical properties with good oxidation protection …

TiN and Ti1− xAlxN thin films with different aluminum concentrations (x= 0.35, 0.40, 0.55,
0.64 and 0.81) were synthesized by reactive magnetron co-sputtering technique. The …