Valleytronics in transition metal dichalcogenides materials

Y Liu, Y Gao, S Zhang, J He, J Yu, Z Liu - Nano Research, 2019 - Springer
Valley degree of freedom in the first Brillouin zone of Bloch electrons offers an innovative
approach to information storage and quantum computation. Broken inversion symmetry …

Tunneling magnetoresistance and spin-valley polarization in magnetic silicene superlattices

JG Rojas-Briseño, MA Flores-Carranza… - Physical Review B, 2021 - APS
We study the tunneling magnetoresistance and the spin-valley transport in silicene-based
magnetic superlattices. The superlattice profile is obtained by the periodic modulation of the …

Electrically controllable sudden reversals in spin and valley polarization in silicene

Q Zhang, KS Chan, J Li - Scientific Reports, 2016 - nature.com
We study the spin and valley dependent transport in a silicene superlattice under the
influence of a magnetic exchange field, a perpendicular electric field and a voltage potential …

Dirac cone pairs in silicene induced by interface Si-Ag hybridization: A first-principles effective band study

C Lian, S Meng - Physical Review B, 2017 - APS
Using density functional theory combined with orbital-selective band unfolding techniques,
we study the effective band structure of silicene (3× 3)/Ag (111)(4× 4) structure. Consistent …

Valley transport in strained silicene heterojunctions with zigzag and armchair interfaces

ZB Siu, M Jalil - Applied Physics Letters, 2023 - pubs.aip.org
We study the carrier transport through a strained silicene heterojunction based on the tight-
binding Hamiltonian, focusing on the effect of the interfaces, ie, zigzag or armchair, on the …

Spin-dependent electronic transport properties of transition metal atoms doped α-armchair graphyne nanoribbons

S Fotoohi, S Haji-Nasiri - Physica E: Low-dimensional Systems and …, 2018 - Elsevier
Spin-dependent electronic transport properties of single 3d transition metal (TM) atoms
doped α-armchair graphyne nanoribbons (α-AGyNR) are investigated by non-equilibrium …

Temperature effects on the conductance, spin-valley polarization and tunneling magnetoresistance of single magnetic silicene junctions

JG Rojas-Briseño, P Villasana-Mercado… - Journal of Physics …, 2022 - iopscience.iop.org
Magnetic silicene junctions are versatile structures with spin-valley polarization and
magnetoresistive capabilities. Here, we investigate the temperature effects on the transport …

Effect of band bending on the valley-resolved transport through zigzag silicene nanoribbons subject to edge electric fields

M Li, ZY Zhao - Chinese Journal of Physics, 2024 - Elsevier
This work examines the effect of band bending on the valley polarization of electron
transport through zigzag silicene nanoribbons (ZSiNRs) subject to perpendicular edge …

Goos-Hänchen-like shift in biased silicene

BS Zhu, Y Wang, YY Lou - Journal of Applied Physics, 2016 - pubs.aip.org
We have theoretically studied the Goos-Hänchen-like shift of spinor-unpolarized beams
tunneling through various gate-biased silicene nanostructures. Following the stationary …

Spin-valley filtering induced by resonant states in silicene

W Li, WT Lu, KC Li - The European Physical Journal B, 2022 - Springer
We studied the spin and valley transport of silicene through a resonant-tunneling structure
with electric field and magnetic field. It is demonstrated that a perfect spin-valley filtering …