This Perspective presents an overview on the epitaxial growth and optical properties of
GaAs quantum dots obtained with the droplet etching method as high-quality sources of …

The self-organized in situ drilling of nanoholes into semiconductor surfaces by using liquid
metallic droplets during conventional molecular beam epitaxy represents a new degree of …

We present a detailed atomic-resolution study of morphology and substrate etching
mechanism in InAs/InP droplet epitaxy quantum dots (QDs) grown by metal–organic vapor …

We study the self-assembled local droplet etching of nanoholes in AlGaAs surfaces with Ga
droplets. The data establish an unexpected delay of both the hole drilling process as well as …

Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-
assembled drilling of nanoholes into III/V semiconductor surfaces. An essential process …

We demonstrate nanohole formation in AlGaSb by Ga droplet etching within a temperature
range from 270 to 500° C, allowing a wide range of tunability of the nanohole density. By …

We demonstrate a new quantum-confined semiconductor material based on GaSb quantum
dots (QDs) embedded in a single-crystalline AlGaSb matrix by filling droplet-etched …

In this paper, we have researched the electronic and optical properties of cylindrical
quantum dot structures by selecting four different hyperbolic-type potentials in the axial …

Strain-free GaAs cone–shell quantum structures (CSQS) with widely tunable wave functions
(WF) are fabricated using local droplet etching (LDE) during molecular beam epitaxy (MBE) …

We study the optical emission of single GaAs quantum dots (QDs). The QDs are fabricated
by filling of nanoholes in AlGaAs and AlAs which are generated in a self-assembled fashion …