This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

Zinc sulfide (ZnS) is one of the first semiconductors discovered. It has traditionally shown
remarkable versatility and promise for novel fundamental properties and diverse …

ZnO is a II–VI semiconductor with a band gap energy (Eg) of 3.37 eV at room temperature. It
is a potential competitor of GaN and SiC for ultraviolet and blue light-emitter and detector …

The temperature dependencies of the fundamental energy gaps of group‐IV, III–V, and II–VI
materials are fitted by means of a relatively simple analytical four‐parameter expression …

The last 4 years have seen the rapid emergence of a new solar cell technology based on
organic-inorganic lead halide perovskites, primarily CH 3 NH 3 PbI 3 and related halides …

(LEDs), and photodetectors.[2] ZnSe-based microstructures have been widely investigated
in recent years for their potential optoelectronic applications in high-density optical storage …

We have developed a novel dispersion-related model for monotonic temperature
dependencies of fundamental band gaps, E g (T), and the associated excitonic absorption …

Efficiency of the quantum dots based solar cells relies on charge transfer at the interface and
hence on the relative alignment of the energy levels between materials. Despite a high …

We perform numerical analyses of the temperature dependences of fundamental band gaps,
E g (T), and/or exciton peak positions, E gx (T), for a large variety of group IV, III–V, and II–VI …

PtSe2 has received substantial research attention because of its intriguing physical
properties and potential practical applications. In this paper, we investigated the optical …