Beta-Gallium Oxide Material and Device Technologies

M Higashiwaki, MH Wong - Annual Review of Materials …, 2024 - annualreviews.org
Beta-gallium oxide (β-Ga2O3) is a material with a history of research and development
spanning about 70 years; however, it has attracted little attention as a semiconductor for a …

Characteristics of grafted monocrystalline Si/β-Ga2O3p–n heterojunction

J Gong, D Kim, H Jang, F Alema, Q Wang… - Applied Physics …, 2024 - pubs.aip.org
Beta-phase gallium oxide (β-Ga 2 O 3) has exceptional electronic properties with vast
potential in power and radio frequency electronics. Despite the excellent demonstrations of …

Ultra-low reverse leakage in large area kilo-volt class β-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF

S Roy, B Kostroun, J Cooke, Y Liu… - Applied Physics …, 2023 - pubs.aip.org
We introduce vertical Schottky barrier diodes (SBDs) based on β-Ga 2 O 3 with trench
architecture, featuring a high-permittivity dielectric RESURF structure. These diodes are …

[HTML][HTML] Unraveling the atomic mechanism of the disorder–order phase transition from γ-Ga2O3 to β-Ga2O3

C Wouters, M Nofal, P Mazzolini, J Zhang, T Remmele… - APL Materials, 2024 - pubs.aip.org
In this paper, we employ in situ transmission electron microscopy to study the disorder–order
phase transition from amorphous Ga 2 O 3 to γ-Ga 2 O 3 and then to β-Ga 2 O 3. The in situ …

200 cm2/Vs electron mobility and controlled low 1015 cm− 3 Si doping in (010) β-Ga2O3 epitaxial drift layers

C Peterson, A Bhattacharyya… - Applied Physics …, 2024 - pubs.aip.org
We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-
doped 4.5 μm thick β-Ga 2 O 3 films with electron concentrations in the 10 15 cm− 3 range …

Heterointegrated Ga2O3-on-SiC RF MOSFETs With f T/f max of 47/51 GHz by Ion-Cutting Process

X Yu, W Xu, Y Wang, B Qiao, R Shen… - IEEE Electron …, 2023 - ieeexplore.ieee.org
Heterointegrated Ga2O3-on-SiC radio-frequency (RF) MOSFETs with record-high frequency
performances were reported. A two-dimensional electron gas like channel with a high …

Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) pn heterojunction determined by X-ray photoelectron spectroscopy

J Gong, J Zhou, A Dheenan, M Sheikhi, F Alema… - Applied Surface …, 2024 - Elsevier
Beta-phase gallium oxide (β-Ga 2 O 3) research has gained accelerated pace nowadays.
However, the high acceptor activation energy obstructs the development of homojunction …

Improved electrical performance for SiO2/β-Ga2O3 (001) MIS capacitor by post-deposition annealing

Q Zhang, D Zhai, M He, J Lu - Materials Science in Semiconductor …, 2024 - Elsevier
In this study, we have fabricated a high-performance SiO 2/β-Ga 2 O 3 (001) MIS capacitor
and investigated the effect of low-temperature post-deposition annealing (PDA) on its …

Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga2O3 UV Detector via Impurity-Level Transition and Multiple Carrier Transport

S Yao, Z Liu, M Zhang, L Shu, Z Xi, L Li… - ACS Applied …, 2023 - ACS Publications
In this work, a deep-UV photodetector based on a Sn-doped Ga2O3 (Sn: Ga2O3) thin film
grown by mist chemical vapor deposition (mist-CVD) technology on an α-Al2O3 substrate is …

[HTML][HTML] Radiation resilience of β-Ga2O3 Schottky barrier diodes under high dose gamma radiation

SA Khan, S Saha, U Singisetti… - Journal of Applied …, 2024 - pubs.aip.org
A systematic investigation of the electrical characteristics of β-Ga 2 O 3 Schottky barrier
diodes (SBDs) has been conducted under high-dose 60 Co gamma radiation, with total …