To predict the negative bias temperature instability (NBTI) toward the end of pMOSFETs' ten
years lifetime, power-law-based extrapolation is the industrial standard method. The …

Positive charges (PCs) in gate dielectric shift the threshold voltage and cause a time-
dependent device variability. To assess their impact on circuits, it is useful to know their …

The access transistor of SRAM can suffer both positive bias temperature instability (PBTI)
and hot carrier aging (HCA) during operation. The understanding of electron traps (ETs) is …

Variability of nanometer-size devices is a major challenge for circuit design. Apart from the
as-fabricated variability, the postfabrication degradation introduces a time-dependent …

Lifetime of pMOSFETs is limited by NBTI. Conventional slow measurement overestimates
lifetime due to recovery. The fast techniques suppress recovery, but cannot give reliable …

Defect generation limits device lifetime and enhances its variability. Previous works mainly
addressed the generation kinetics and process. The current understanding is that the …

SRAM is vulnerable to device-to-device variation (DDV), since it uses minimum-sized
devices and requires device matching. In addition to the as-fabricated DDV at time-zero …

Discreteness of aging-induced charges causes a Time-dependent Device-to-Device
Variation (TDDV) and SRAM is vulnerable to it. This work analyses the shortcomings of …

Negative bias temperature instability (NBTI) has become an important reliability concern for
nano-scaled complementary metal oxide (CMOS) devices. This paper presents the effect of …

Traps are the defects that can capture mobile charge carriers and this article focuses on the
traps in gate dielectrics prepared on Silicon substrate, which dominates the modern …