An approach for determining the optimal laser parameters (ie, pulse energy, focused spot
size, wavelength, and pulse duration) for correlating single-event transients induced via two …

A SiGe RF low-noise amplifier (LNA) with built-in tolerance to single-event transients is
proposed. The LNA utilizes an inverse-mode SiGe HBT for the common-base transistor in a …

A comparison of heavy-ion-induced single-event transients (SETs) in silicon-germanium
heterojunction bipolar transistors (SiGe HBTs) fabricated on both bulk and silicon-on …

The impact of semiconductor process scaling on the overall transient response of SiGe
BiCMOS platforms is investigated. Pulsed-laser two-photon absorption (TPA) and heavyion …

This paper presents an investigation of the impact of single-event transients (SETs) and total
ionization dose (TID) on precision voltage reference circuits designed in a fourth-generation …

The advantages and the tradeoffs associated with the use of inverse-mode (IM) silicon–
germanium (SiGe) heterojunction bipolar transistors (HBTs) biasing circuitry in radio …

The single-event transient (SET) response of a SiGe-based, L-band low-noise amplifier
(LNA) is investigated, with a focus on providing recommendations for radiation event …

This article presents an experimental study of single-event transients (SETs) induced by
pulsed X-rays in SiGe heterojunction bipolar transistors (HBTs). Device-level transient data …

Best practice in mitigation strategies for single-event transients (SETs) in radio-frequency
(RF) receiver modules is investigated using a variety of integrated receivers utilizing inverse …

This paper presents a BiCMOS low-noise amplifier (LNA) operating at G-band (140 to 220
GHz) that is robust against harsh operation conditions, namely large temperature variations …