Gallium nitride high-electron-mobility transistor (GaN HEMT) power devices are favored in
various scenarios due to their high-power density and efficiency. However, with the …

The double-side cooling (DSC) packaging becomes more and more popular with the great
demands of high power and fast speed, especially for silicon carbide metal oxide …

The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great
potential for high-power, high-temperature, and high-frequency applications. However, it is …

This paper proposes a cross-scale simulation approach for evaluating the steady-state
electrothermal performance of power MOSFETs at the device–package–heatsink–board …

Junction temperature estimation with high precision is crucial to the reliability and safe
operating of silicon-carbide (SiC) metal–oxide–semiconductor field-effect transistors …

The efficiency and power density of power conversion systems can be greatly improved by
utilizing gallium nitride high-electron-mobility transistors (GaN HEMTs) due to their ultra-low …

This work aims to understand the influence of various test conditions on the measurement of
the junction-to-case thermal resistance (R TH, JC) of SiC packages, and identify a procedure …

The investigation of aluminum gallium nitride/gallium nitride high electron mobility transistor
(AlGaN/GaN HEMT) devices with a dual‐metal gate (DMG) structure encompasses both …

Global energy consumption continues to grow, driving the need for cheap, power-dense
power electronics. Replacing the incumbent silicon insulated gate bipolar transistors with …