InAs/(In, Ga) Sb type‐II strained layer superlattices (T2SLs) have made significant progress
since they were first proposed as an infrared (IR) sensing material more than three decades …

Photonics | Free Full-Text | Recent Advances in High Speed Photodetectors for eSWIR/MWIR/LWIR
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We have investigated specifically designed GaSb-based laser diodes epitaxially grown on a
Si substrate. We demonstrate continuous-wave operation of these laser diodes emitting near …

We present an interband cascade infrared photodetector based on Ga-free type-II
superlattice absorbers. Substituting the more standard InAs/GaSb superlattice for a Ga-free …

We investigate highly-doped InAsSb layers lattice matched onto GaSb substrates by angular-
dependent reflectance. A resonant dip is evidenced near the plasma frequency of thin …

We report on a type-II InAs/GaSb strained layer superlattice (SLS) photodetector (λ∼ 4.3 µm
at 77 K) with nBn design grown on a GaAs substrate using interfacial misfit dislocation …

We report our recent studies of interband cascade infrared photodetectors (ICIPs) with 100%
cutoff wavelengths of 16.0 μm and 9.2 μm at 78 K. The very-long-wavelength infrared …

We demonstrate the high-performance longwavelength InAs/GaSb superlattice (SL) infrared
photodetectors based on an Al-free single heterojunction grown by metalorganic chemical …

Quantized spin-wave known as magnon, a bosonic quasiparticle, can drag electrons or
holes via sd exchange interaction and boost the thermopower over the conventional …

Abstract Design of InAs/GaSb type-II superlattice (T2SL) infrared barrier detectors is
theoretically investigated. Each part of the barrier structures is studied in order to achieve …