Recently, there are increasing interests in two-dimensional materials, as a result of their
outstanding electrical and optical properties and numerous potential applications in …

In this letter, we report the first demonstration of monolithically integrated ultraviolet (UV)
light emitting diodes (LEDs) and visible-blind UV photodetectors (PDs) employing the same …

Visible-light heterojunction phototransistors (HPTs) featuring high responsivity, high speed,
and bias-controlled spectral response were fabricated using dopant-free polarization …

Ultraviolet (UV) detectors with high gain at low bias are urgently demanded. In this study, a
GaN-based UV bipolar phototransistor (BPT) with high zero-bias gain was obtained based …

Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals
heterostructures play an important role in the development of future nanoelectronics. Herein …

We report high-responsivity GaN/InGaN heterojunction phototransistors (HPTs) grown on
sapphire substrates. Under the ultraviolet (UV) photon illumination from the front side of the …

Monolithic integration of GaN-based phototransistors and light-emitting diodes (LEDs) is
reported. Starting with an LED epitaxial wafer, selective Si diffusion was performed to …

We report the fabrication and characterization of the visible-blind AlGaN/GaN-based
avalanche heterojunction phototransistors (AHPT) with a collector-up configuration. The …

A novel optically activated cascode gallium nitride (GaN) high-electron-mobility transistor
(HEMT) is introduced and evaluated in this paper. Furthermore, optical triggering of GaN …

High-performance InGaN-based pin photodetectors (PDs) were fabricated using a typical
light-emitting diode (LED) epitaxial structure and surface texturing. A multiple-quantum-well …