Physics, Structures, and Applications of Fluorite‐Structured Ferroelectric Tunnel Junctions
The interest in ferroelectric tunnel junctions (FTJ) has been revitalized by the discovery of
ferroelectricity in fluorite‐structured oxides such as HfO2 and ZrO2. In terms of thickness …
ferroelectricity in fluorite‐structured oxides such as HfO2 and ZrO2. In terms of thickness …
Review on the microstructure of ferroelectric hafnium oxides
Ferroelectric hafnium oxide is of major interest for a multitude of applications in
microelectronics, ranging from neuromorphic devices to actuators and sensors. While the …
microelectronics, ranging from neuromorphic devices to actuators and sensors. While the …
Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO2
Nanoscale polycrystalline thin-film heterostructures are central to microelectronics, for
example, metals used as interconnects and high-K oxides used in dynamic random-access …
example, metals used as interconnects and high-K oxides used in dynamic random-access …
Disturb-free operations of multilevel cell ferroelectric FETs for NAND applications
C Jin, J Xu, J Gu, J Zhao, X Jia, J Chen… - … on Electron Devices, 2023 - ieeexplore.ieee.org
We have experimentally investigated disturb-free operations of multilevel cell (MLC)
ferroelectric field-effect transistors (FeFETs) in a NAND array. The fabricated FeFET cells are …
ferroelectric field-effect transistors (FeFETs) in a NAND array. The fabricated FeFET cells are …
Effect of Al2O3 interlayers on the microstructure and electrical response of ferroelectric doped HfO2 thin films
Novel devices based on ferroelectric hafnium oxide comply with the increasing demand for
highly scalable embedded non-volatile memory devices, especially for in-memory …
highly scalable embedded non-volatile memory devices, especially for in-memory …
Giant energy storage and power density negative capacitance superlattices
Dielectric electrostatic capacitors1, due to their ultrafast charge-discharge capability, are
attractive for high power energy storage applications. Along with ultrafast operation, on-chip …
attractive for high power energy storage applications. Along with ultrafast operation, on-chip …
Direct growth of ferroelectric orthorhombic ZrO 2 on Ru by atomic layer deposition at 300° C
Fluorite-structured binary oxide ferroelectrics exhibit robust ferroelectricity at a thickness
below 10 nm, making them highly scalable and applicable for high-end semiconductor …
below 10 nm, making them highly scalable and applicable for high-end semiconductor …
3D Ferroelectric Phase Field Simulations of Polycrystalline Multi‐Phase Hafnia and Zirconia Based Ultra‐Thin Films
Abstract HfO2–and ZrO2–based ferroelectric thin films have emerged as promising
candidates for the gate oxides of next‐generation electronic devices. Recent work has …
candidates for the gate oxides of next‐generation electronic devices. Recent work has …
Pyroelectric and ferroelectric properties of hafnium oxide doped with Si via plasma enhanced ald
M Neuber, MW Lederer, K Mertens, T Kämpfe… - Crystals, 2022 - mdpi.com
Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory
applications. In particular, Si-doped hafnium oxide layers are investigated for the application …
applications. In particular, Si-doped hafnium oxide layers are investigated for the application …
Nanoscale Phase and Orientation Mapping in Multiphase Polycrystalline Hafnium Zirconium Oxide Thin Films Using 4D‐STEM and Automated Diffraction Indexing
Ferroelectric hafnium zirconium oxide (HZO) holds promise for nextgeneration memory and
transistors due to its superior scalability and seamless integration with complementary metal …
transistors due to its superior scalability and seamless integration with complementary metal …