Neuromorphic nanoelectronic materials
VK Sangwan, MC Hersam - Nature nanotechnology, 2020 - nature.com
Memristive and nanoionic devices have recently emerged as leading candidates for
neuromorphic computing architectures. While top-down fabrication based on conventional …
neuromorphic computing architectures. While top-down fabrication based on conventional …
Emerging 2D memory devices for in‐memory computing
L Yin, R Cheng, Y Wen, C Liu, J He - Advanced Materials, 2021 - Wiley Online Library
It is predicted that the conventional von Neumann computing architecture cannot meet the
demands of future data‐intensive computing applications due to the bottleneck between the …
demands of future data‐intensive computing applications due to the bottleneck between the …
Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
Memristors are two-terminal passive circuit elements that have been developed for use in
non-volatile resistive random-access memory and may also be useful in neuromorphic …
non-volatile resistive random-access memory and may also be useful in neuromorphic …
A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications
As conventional circuits based on field-effect transistors are approaching their physical limits
due to quantum phenomena, semi-floating gate transistors have emerged as an alternative …
due to quantum phenomena, semi-floating gate transistors have emerged as an alternative …
Dual‐Gated MoS2 Memtransistor Crossbar Array
Memristive systems offer biomimetic functions that are being actively explored for energy‐
efficient neuromorphic circuits. In addition to providing ultimate geometric scaling limits, 2D …
efficient neuromorphic circuits. In addition to providing ultimate geometric scaling limits, 2D …
Hysteresis in the transfer characteristics of MoS2 transistors
A Di Bartolomeo, L Genovese, F Giubileo, L Iemmo… - 2D …, 2017 - iopscience.iop.org
We investigate the origin of the hysteresis observed in the transfer characteristics of back-
gated field-effect transistors with an exfoliated MoS 2 channel. We find that the hysteresis is …
gated field-effect transistors with an exfoliated MoS 2 channel. We find that the hysteresis is …
Ionotronic WS2 memtransistors for 6-bit storage and neuromorphic adaptation at high temperature
Inspired by massive parallelism, an increase in internet-of-things devices, robust
computation, and Big-data, the upsurge research in building multi-bit mem-transistors is ever …
computation, and Big-data, the upsurge research in building multi-bit mem-transistors is ever …
[HTML][HTML] Optoelectronic memory in 2D MoS2 field effect transistor
Abstract 2D layered materials with their tunable bandgap and unique crystal structures are
excellent candidates for 2D optoelectronic memories. In this work, we present a simple …
excellent candidates for 2D optoelectronic memories. In this work, we present a simple …
Thermally Driven Multilevel Non-Volatile Memory with Monolayer MoS2 for Brain-Inspired Artificial Learning
The demands of modern electronic components require advanced computing platforms for
efficient information processing to realize in-memory operations with a high density of data …
efficient information processing to realize in-memory operations with a high density of data …
Pressure‐tunable ambipolar conduction and hysteresis in thin palladium diselenide field effect transistors
Few‐layer palladium diselenide (PdSe2) field effect transistors are studied under external
stimuli such as electrical and optical fields, electron irradiation, and gas pressure. The …
stimuli such as electrical and optical fields, electron irradiation, and gas pressure. The …