Electron effective masses, nonparabolicity and scattering times in one side delta-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells at high electron density limit
DA Safonov, AN Klochkov, AN Vinichenko… - Physica E: Low …, 2021 - Elsevier
The dependence of electron transport properties of two-dimensional electron gas on sheet
doping concentration in one-sided δ-doped pseudomorphic Al x Ga 1-x As/In 0.2 Ga 0.8 …
doping concentration in one-sided δ-doped pseudomorphic Al x Ga 1-x As/In 0.2 Ga 0.8 …
Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping
VM Lukashin, AB Pashkovskii, KS Zhuravlev… - Semiconductors, 2014 - Springer
We report the first results on the development of high-power field-effect transistors on
gallium-arsenide heterosrtuctures with a quantum well and additional potential barriers …
gallium-arsenide heterosrtuctures with a quantum well and additional potential barriers …
Influence of the additional p+ doped layers on the properties of AlGaAs/InGaAs/AlGaAs heterostructures for high power SHF transistors
DV Gulyaev, KS Zhuravlev, AK Bakarov… - Journal of Physics D …, 2016 - iopscience.iop.org
The peculiarities of a new type of pseudomorphic AlGaAs/InGaAs/AlGaAs heterostructures
with the additional acceptor doping of barriers used for the creation of the power SHF …
with the additional acceptor doping of barriers used for the creation of the power SHF …
Design, fabrication and characterization of In0. 23Ga0. 77As-channel planar Gunn diodes for millimeter wave applications
We present detailed design, fabrication and characterization of In0. 23Ga0. 77As-based
planar Gunn diodes in this paper. The devices have AlGaAs/InGaAs/AlGaAs heterojunctions …
planar Gunn diodes in this paper. The devices have AlGaAs/InGaAs/AlGaAs heterojunctions …
Design and characterisation of millimetre wave planar Gunn diodes and integrated circuits
C Li - 2012 - theses.gla.ac.uk
Heterojunction planar Gunn devices were first demonstrated by Khalid et al in 2007. This
new design of Gunn device, or transferred electron device, was based on the well …
new design of Gunn device, or transferred electron device, was based on the well …
Temperature dependence of spin photocurrent spectra induced by Rashba-and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs …
J Yu, S Cheng, Y Lai, Q Zheng, L Zhu, Y Chen… - Optics …, 2015 - opg.optica.org
Spin photocurrent spectra induced by Rashba-and Dresselhaus-type circular photogalvanic
effect (CPGE) at inter-band excitation have been experimentally investigated in …
effect (CPGE) at inter-band excitation have been experimentally investigated in …
Investigation of delta-doped pHEMT InGaAs/GaAs/AlGaAs structures by the electrochemical capacitance-voltage technique
G Yakovlev, D Frolov, V Zubkov - Journal of Physics: Conference …, 2016 - iopscience.iop.org
In pHEMT devices, a two dimensional (2D) conducting channel representing a quantum well
(QW) and adjacent layers of wide-gap semiconductors are fabricated on an undoped …
(QW) and adjacent layers of wide-gap semiconductors are fabricated on an undoped …
Spin depolarization under low electric fields at low temperatures in undoped InGaAs/AlGaAs multiple quantum well
The spin polarization under low electric fields (≤ 300 V/cm) at low temperatures has been
studied in undoped InGaAs/AlGaAs multiple quantum well. The spin polarization was …
studied in undoped InGaAs/AlGaAs multiple quantum well. The spin polarization was …
Electron transport in PHEMT AlGaAs/InGaAs/GaAs quantum wells at different temperatures: influence of one-side δ-Si doping
DA Safonov, AN Vinichenko, NI Kargin, IS Vasil'evskii - Semiconductors, 2018 - Springer
The influence of the concentration of δ doping with Si on the electron transport properties of
Al 0.25 Ga 0.75 As/In 0.2 Ga 0.8 As/GaAs pseudomorphic quantum wells is studied in a …
Al 0.25 Ga 0.75 As/In 0.2 Ga 0.8 As/GaAs pseudomorphic quantum wells is studied in a …
Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well
GB Galiev, AL Vasiliev, RM Imamov, EA Klimov… - Crystallography …, 2014 - Springer
A complex study of the influence of nanoscale InAs inserts with thicknesses from 1.7 to 3.0
nm introduced into In 0.53 Ga 0.47 As quantum wells (QWs) on the structural and electrical …
nm introduced into In 0.53 Ga 0.47 As quantum wells (QWs) on the structural and electrical …