Magnetic nanostructures are an integral part to many state-of-the-art and emerging
technologies. However, the complete path from parts (the nanostructures) to the …

Among a rich variety of emerging spintronic devices, spin‐torque diodes (STDs) are among
the most interesting, from both a fundamental and an applied perspective. The spin‐torque …

We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic
tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy …

Spin torque from spin current applied to a nanoscale region of a ferromagnet can act as
negative magnetic damping and thereby excite self-oscillations of its magnetization. In …

Highly sensitive microwave devices that are operational at room temperature are important
for high-speed multiplex telecommunications. Quantum devices such as superconducting …

The anomalous Hall effect in ferromagnets is a well-known phenomenon in which
electromotive force is generated in the direction perpendicular to both the electric current …

We model “soft” error rates for writing (WSER) and for reading (RSER) for spin-torque
memory devices that have a free layer with easy axis perpendicular to the film plane by …

Shifting electrically a magnetic domain wall (DW) by the spin transfer mechanism,,, is one of
the ways foreseen for the switching of future spintronic memories or registers,. But the …

Manipulation of magnetization by electric field is a central goal of spintronics because it
enables energy-efficient operation of spin-based devices. Spin wave devices are promising …

The spin anomalous Hall effect (SAHE), generating spin angular momentum flow (spin
current, J s), in an L 1 0-FePt ferromagnet was quantitatively evaluated by exploiting giant …