The rapid development of Internet of Things devices requires real time processing of a huge
amount of digital data, creating a new demand for computing technology. Phase change …

Phase-change memory (PCM) is an emerging memory technology based on the resistance
contrast between the crystalline and amorphous states of a material. Further development …

Abstract Ge-Sb-Te (GST) thin films are emerging materials for various non-volatile memory
applications. The compounds contain a huge number of vacancies that play important roles …

Ge-rich Ge–Sb–Te alloys are materials with potential for new non-volatile memories named
Phase Change Memories offering an extended range of possible applications. However, the …

Chalcogenide-based thin films are employed in data storage and memory technology
whereas van der Waals-bonded layered chalcogenide heterostructures are considered to …

The effect of varying nitrogen vacancies on the growth, microstructure, spinodal
decomposition and hardness values of predominantly single crystal cubic phase c-(Ti 1-x Al …

Ge 2 Sb 2 Te 5 (GST) is the most important material for phase change random access
memory (PCRAM) applications, while the formation of hexagonal (h-) phase results in low …

Carbon (C)-doped Ge2Sb2Te5 material is a potential candidate in phase change random
access memory (PCRAM) because of its superb thermal stability and ultrahigh cycle …

Unconventionally high amount of atomic vacancies up to more than 10% are known to form
in Ge-Sb-Te crystals upon rapid crystallization from the amorphous phase. Upon thermal …

We have studied by electron microscopy and x-ray diffraction techniques the amorphous-to-
crystalline phase transition which occurs during annealing of a highly Ge-rich and N-doped …