Synthesis of wafer‐scale graphene with chemical vapor deposition for electronic device applications

B Sun, J Pang, Q Cheng, S Zhang, Y Li… - Advanced Materials …, 2021 - Wiley Online Library
The first isolation of graphene opens the avenue for new platforms for physics, electronic
engineering, and materials sciences. Among several kinds of synthesis approaches …

Ion irradiation/implantation induced defect engineering and modification in graphene derivatives-based nanocomposites: Energy storage/conversion and sensor

S Kalia, R Kumar, R Dhiman, RK Singh - Journal of Energy Storage, 2024 - Elsevier
A few decades ago, the irradiation process was considered to be just a lethal technique that
damaged the structure of solid materials, but in the last few years, new discoveries have also …

Optoelectronic simulation of a high efficiency C2N based solar cell via buffer layer optimization

S Yasin, ZA Waar, T Al Zoubi, M Moustafa - Optical Materials, 2021 - Elsevier
In this paper, the C 2 N based solar cell has been developed and simulated with varied
buffer layers (MZO, IGZO, Cd 0.5 Zn 0.5 S, and PCBM). The study is performed by utilizing …

Chemical Dopant‐Free Doping by Annealing and Electron Beam Irradiation on 2D Materials

MS Choi, M Lee, TD Ngo, J Hone… - Advanced Electronic …, 2021 - Wiley Online Library
Doping is a key technique for forming complementary metal‐oxide‐semiconductor (CMOS)
that is a basic building block for current state‐of‐the‐art semiconductor devices. However …

Influence of defects and heteroatoms on the chemical properties of supported graphene layers

G Carraro, L Savio, L Vattuone - Coatings, 2022 - mdpi.com
A large and growing number of theoretical papers report the possible role of defects and
heteroatoms on the chemical properties of single-layer graphene. Indeed, they are expected …

Spectroscopic and electrical characterizations of low-damage phosphorous-doped graphene via ion implantation

SM He, CC Huang, JW Liou, WY Woon… - ACS applied materials …, 2019 - ACS Publications
Development of n-/p-type semiconducting graphenes is a critical route to implement in
graphene-based nanoelectronics and optronics. Compared to the p-type graphene, the n …

Reversible Polarity Control in 2D MoTe2 Field‐Effect Transistors for Complementary Logic Gate Applications

BS Yu, W Kim, J Jang, JJ Lee, JP Hong… - Advanced Functional …, 2024 - Wiley Online Library
Precise control over polarity in field‐effect transistors (FETs) plays a pivotal role in the
design and construction of complementary metal–oxide–semiconductor (CMOS) logic …

Thin-Film Carbon Nitride (C2N)-Based Solar Cell Optimization Considering Zn1−xMgxO as a Buffer Layer

W Ahmad, W Farooq, AD Khan, ST Jan, M Jasiński… - Processes, 2022 - mdpi.com
Carbon nitride (C2N), a two-dimensional material, is rapidly gaining popularity in the
photovoltaic (PV) research community owing to its excellent properties, such as high thermal …

Wafer-scalable chemical modification of amino groups on graphene biosensors

T Saito, M Tabata, A Isobayashi, H Miki, Y Miyahara… - Langmuir, 2021 - ACS Publications
Graphene's remarkable attributes make it suitable for application to biosensors for
biomolecular recognition. Specific and precise target detection is realized by designing …

Combined Raman spectroscopy and magneto-transport measurements in disordered graphene: Correlating Raman D band and weak localization features

I Childres, Y Qi, MA Sadi, JF Ribeiro, H Cao, YP Chen - Coatings, 2022 - mdpi.com
Although previous studies have reported the Raman and weak localization properties of
graphene separately, very few studies have examined the correlation between the Raman …