Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide …

This work addresses the thermal stability of bipolar resistive switching in yttrium oxide-based
resistive random access memory revealed through the temperature dependence of the DC …

In this study, the possibilities of noise tailoring in filamentary resistive switching memory
devices are investigated. To this end, the resistance and frequency scaling of the low …

In this paper, we review the 1/f-type noise properties of nanoelectronic devices focusing on
three demonstrative platforms: resistive switching memories, graphene nanogaps and single …

In this work, the quasi-analog to discrete transition occurring in the current–voltage
characteristic of oxygen engineered yttrium oxide-based resistive random-access memory …

Resistive random access memory (RRAM) devices are widely considered promising
candidates for future memory and logic applications. Though their excellent performances …

HfO 2-based resistive random-access memory devices are promising candidates for new
memory and computing applications. Hereby, scaling of the devices is a key issue, where …

Sol–gel-processed Y 2 O 3 films were used as an active-channel layer for resistive switching
memory (RRAM) devices. The influence of post-annealing temperature on structural …

Y 2 O 3 has attracted attention as the representative emerging candidate of a resistive
switching (RS) medium in memristors due to its excellent electrical properties and good …

Fluctuation (noise) spectroscopy is widely used to investigate the low-frequency dynamics of
charge carriers in condensed-matter systems, aiming to (i) improve the performance of micro …