Review of commercial GaN power devices and GaN-based converter design challenges
Gallium nitride (GaN) power devices are an emerging technology that have only recently
become available commercially. This new technology enables the design of converters at …
become available commercially. This new technology enables the design of converters at …
High-power wind energy conversion systems: State-of-the-art and emerging technologies
V Yaramasu, B Wu, PC Sen, S Kouro… - Proceedings of the …, 2015 - ieeexplore.ieee.org
This paper presents a comprehensive study on the state-of-the-art and emerging wind
energy technologies from the electrical engineering perspective. In an attempt to decrease …
energy technologies from the electrical engineering perspective. In an attempt to decrease …
On the practical design of a high power density SiC single-phase uninterrupted power supply system
This paper proposes a high power density SiC single-phase system potential for
uninterrupted power supply applications. To get the high power density, the semiconductors …
uninterrupted power supply applications. To get the high power density, the semiconductors …
Distortion analysis of low-THD/high-bandwidth GaN/SiC class-D amplifier power stages
Power amplifiers providing an output current of high precision, high bandwidth and low
distortion are required in different fields like magnetic resonance imaging or motion control …
distortion are required in different fields like magnetic resonance imaging or motion control …
Review and characterization of gallium nitride power devices
EA Jones - 2016 - trace.tennessee.edu
Abstract Gallium Nitride (GaN) power devices are an emerging technology that have only
recently become available commercially. This new technology enables the design of …
recently become available commercially. This new technology enables the design of …
Etched and regrown vertical GaN junction barrier Schottky diodes
AT Binder, GW Pickrell, AA Allerman… - 2021 IEEE 8th …, 2021 - ieeexplore.ieee.org
This work provides the first demonstration of vertical GaN Junction Barrier Schottky (JBS)
rectifiers fabricated by etch and regrowth of p-GaN. A reverse blocking voltage near 1500 V …
rectifiers fabricated by etch and regrowth of p-GaN. A reverse blocking voltage near 1500 V …
Applications and characterization of four quadrant GaN switch
Bi-directional switches, also called four quadrant switches (FQS), are the basic building
blocks in many power converter circuits, such as cyclo-converters, matrix converters etc …
blocks in many power converter circuits, such as cyclo-converters, matrix converters etc …
Review of recent progresses on gallium nitride transistor in power conversion application
Emerging demands in sustainable energy and power conversion applications are calling for
high frequency and high efficiency switching devices. Gallium nitride (GaN) as one type of …
high frequency and high efficiency switching devices. Gallium nitride (GaN) as one type of …
n++GaN Regrowth Technique Using Pico-Second Laser Ablation to Form Non-Alloy Ohmic Contacts
RA Ferreyra, A Suzuki, T Kazumoto… - IEEE Electron Device …, 2017 - ieeexplore.ieee.org
Non-alloy ohmic contacts were implemented based on the heavily germanium-doped GaN
regrown layer by using the pico-second laser ablation technique for the first time. Owing to …
regrown layer by using the pico-second laser ablation technique for the first time. Owing to …
An optimized vertical GaN parallel split gate trench MOSFET device structure for improved switching performance
NK Jaiswal, VN Ramakrishnan - IEEE Access, 2023 - ieeexplore.ieee.org
This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-
MOSFET) device architecture suitable for power conversion applications. Wherein two …
MOSFET) device architecture suitable for power conversion applications. Wherein two …