This article reviews the state-of-the art status of thermal atomic layer etching of various
materials such as metals, metal oxides, metal nitrides, semiconductors, and their oxides. We …

The atomic layer technique is generating a lot of excitement and study due to its profound
physics and enormous potential in device fabrication. This article reviews current …

This article discusses key elementary surface-reaction processes in state-of-the-art plasma
etching and deposition relevant to nanoelectronic device fabrication and presents a concise …

The thermal etching of first row transition metal oxides was surveyed at 250° C using
acetylacetone (Hacac) and ozone (O3). The metal oxides include Sc2O3, V2O5, VO2 …

As semiconductor device structures continue to approach the nanometer size range, new
challenges in the fabrication of such devices have arisen. For example, the need for high …

As semiconductor devices become miniaturized, the importance of the molecular-level
understanding of the fabrication processes is growing. Titanium nitride (TiN) is an important …

Molecular dynamics simulations were performed to demonstrate nanometer-scale silicon (⁠
Si⁠) trench etching with silicon dioxide (⁠ SiO 2⁠) hard masks by chlorine (⁠ Cl+⁠) ion …

Controlling thickness and morphology of transition-metal thin films used in magnetic random-
access memory fabrication is a major challenge. Thermal dry etching has emerged as a …

Surface modification has been established to control chemical, mechanical, and electronic
properties of oxide surfaces. Surface chemistry of β-diketones on ZnO nanomaterials …

Atomic layer etching (ALE) is required to fabricate the complex 3D structures for future
integrated circuit scaling. To enable ALE for a wide range of materials, it is important to …