We present a critical review of the strategies used in the fabrication of mismatched
semiconductor heterostructures. By using simple concepts derived from the Matthews model …

This article comprehensively reviews the growth of III–V antimony-based semiconductor
materials using metal-organic chemical vapor deposition (MOCVD). It does this by first …

accepted 11 January 1990) During the past decade, nonequilibrium techniques have been
developed for the growth of epitaxial semiconductors, insulators, and metals which have led …

The emergence of the Hg~ _xCdxTe as the most important intrinsic semiconductor alloy
system for infrared detection is well established. However, in spite of the achievements in …

Gain-guided, injection lasers using AlAsSb for optical confinement and a strained
InAsSb/InAs multiquantum well active region were grown by metalorganic chemical vapor …

The residual strain following relaxation in a variety of Si1− x Ge x heteroepitaxial films grown
on (001) Si wafers has been compared with the values of residual strain predicted by the …

We present a computational approach for the determination of the equilibrium misfit
dislocation density and strain in a semiconductor heterostructure with an arbitrary …

There are three main reasons for the study of antimonides, they are the optical [mainly
infrared], electrical [mainly Insb; the Gasb/Inas heterojunction] and structural [mainly …

A high-detectivity infrared photodiode grown using molecular beam epitaxy (MBE) is
discussed. It consisted of a p-'i'-n device embedded in an InAs/sub 0.15/Sb/sub 0.85//InSb …

InP 1-x Sb x was grown by metalorganic chemical vapor deposition under a variety of
conditions. The V/III vapor phase ratio was varied from 327 to 12 over a temperature range …