This article is a review of recent research and development advances in oxide thin film
transistors (TFTs) fabricated by atomic layer deposition (ALD) processes. The ALD process …

Recent studies of the bias‐stress‐driven electrical instability of organic field‐effect
transistors (OFETs) are reviewed. OFETs are operated under continuous gate and …

The effects of bias stress on transistor performance are important when considering
nontraditional channel materials for thin film transistors. Applying a gate bias stress to …

We demonstrate controllable shift of the threshold voltage and the turn-on voltage in
pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the …

Abstract The full color 12.1‐inch WXGA active‐matrix organic light emitting diode (AMOLED)
display was, for the first time, demonstrated using indium‐gallium‐zinc oxide (IGZO) thin‐film …

The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous
indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for …

Organic field‐effect transistors (OFETs) are considered in technological applications for
which low cost or mechanical flexibility are crucial factors. The environmental stability of the …

The purpose of this paper is to give an overview of the state-of-the-art of metal oxide thin-film
transistors (TFTs). First, the question of how to achieve high-performance oxide TFTs is …

The electrical instability of organic field-effect transistors is investigated. We observe that the
threshold-voltage shift (see figure) shows a stretched-exponential time dependence under …

A quantitative study of the dynamics of threshold-voltage shifts with time in gallium-indium
zinc oxide amorphous thin-film transistors is presented using standard analysis based on …