Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory
O Supplie, O Romanyuk, C Koppka, M Steidl… - Progress in Crystal …, 2018 - Elsevier
The integration of III–V semiconductors with Si has been pursued for more than 25 years
since it is strongly desired in various high-efficiency applications ranging from …
since it is strongly desired in various high-efficiency applications ranging from …
Advanced electron microscopy for III/V on silicon integration
The combination of III/V semiconductors with Si is very attractive, since it allows the
fabrication of high efficient optoelectronic devices like solar cells, lasers or the integration of …
fabrication of high efficient optoelectronic devices like solar cells, lasers or the integration of …
[图书][B] Metalorganic vapor phase epitaxy (MOVPE): Growth, materials properties, and applications
S Irvine, P Capper - 2019 - books.google.com
Systematically discusses the growth method, material properties, and applications for key
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …
Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces
The atomic and electronic band structures of GaP/Si (001) heterointerfaces were
investigated by ab initio density functional theory calculations. Relative total energies of …
investigated by ab initio density functional theory calculations. Relative total energies of …
In situ characterization of interfaces relevant for efficient photoinduced reactions
Solar energy conversion and photoinduced bioactive sensors are representing topical
scientific fields, where interfaces play a decisive role for efficient applications. The key to …
scientific fields, where interfaces play a decisive role for efficient applications. The key to …
Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP (As)/Si (1 0 0) interfaces: Interfacial chemical states and complete band …
O Romanyuk, A Paszuk, I Gordeev, RG Wilks… - Applied Surface …, 2022 - Elsevier
The epitaxial growth of the polar GaP (1 0 0) on the nonpolar Si (1 0 0) substrate suffers from
inevitable defects at the antiphase domain boundaries (APDs), resulting from mono-atomic …
inevitable defects at the antiphase domain boundaries (APDs), resulting from mono-atomic …
[HTML][HTML] In situ controlled heteroepitaxy of single-domain GaP on As-modified Si (100)
Metalorganic vapor phase epitaxy of III-V compounds commonly involves arsenic. We study
the formation of atomically well-ordered, As-modified Si (100) surfaces and subsequent …
the formation of atomically well-ordered, As-modified Si (100) surfaces and subsequent …
Study of the interface in a GaP/Si heterojunction solar cell
We have investigated the GaP/Si heterojunction interface for application in silicon
heterojunction solar cells. We performed X-ray photoelectron spectroscopy (XPS) on thin …
heterojunction solar cells. We performed X-ray photoelectron spectroscopy (XPS) on thin …
Control Over Dimer Orientations on Vicinal Si (100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics
S Brückner, O Supplie, A Dobrich… - … status solidi (b), 2018 - Wiley Online Library
In chemical vapor ambience, Si (100) surfaces and hydrogen are strongly interacting with
each other at relevant process temperatures. Energetic considerations cannot solely …
each other at relevant process temperatures. Energetic considerations cannot solely …
Double-layer stepped Si (1 0 0) surfaces prepared in As-rich CVD ambience
Low-defect III-V integration on Si (1 0 0) requires atomically well-ordered heterointerfaces.
To this end, we study the interaction of As with Si (1 0 0) surfaces and the formation of …
To this end, we study the interaction of As with Si (1 0 0) surfaces and the formation of …