A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis
The aim of this paper is to provide an extensive overview about the state-of-art commercially
available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed …
available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed …
Investigation of robustness capability of− 730 V P-channel vertical SiC power MOSFET for complementary inverter applications
In this paper, a p-channel vertical 4H-silicon carbide (SiC) MOSFET (SiC p-MOSFET) has
been fabricated successfully for the first time as a potential candidate for the complementary …
been fabricated successfully for the first time as a potential candidate for the complementary …
High-temperature characterization of a 1.2-kV SiC MOSFET using dynamic short-circuit measurement technique
Threshold voltage and channel mobility of a 1.2-kV planar-channel SiC MOSFET at high
junction temperature (Ti) up to 700° C have been extracted and analyzed for the first time, by …
junction temperature (Ti) up to 700° C have been extracted and analyzed for the first time, by …
SiC power device design and fabrication
N Iwamuro - Wide Bandgap Semiconductor Power Devices, 2019 - Elsevier
Silicon carbide (SiC) is one of the wide bandgap semiconductor materials and its wide
bandgap and high thermal stability make it possible to operate the SiC devices at very high …
bandgap and high thermal stability make it possible to operate the SiC devices at very high …
Exploring SiC planar IGBTs towards enhanced conductivity modulation comparable to SiC trench IGBTs
The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate,
since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the …
since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the …
[PDF][PDF] Study on robustness issues and related mechanisms for silicon carbide power mosfets
J An - 2018 - tsukuba.repo.nii.ac.jp
Research and development of semiconductor materials and devices are the profoundly
influence and strong driving force for the revolutionary progress to our modern society. Since …
influence and strong driving force for the revolutionary progress to our modern society. Since …