An ultra-low specific on-resistance 4H-SiC power laterally diffused metal oxide
semiconductor (LDMOS) device is proposed for 1200V-class applications. In the proposed …

In thsi paper a novel optimum variation lateral doping 4H-SiC lateral double-diffused metal
oxide semiconductor (LDMOS) field-effect transistor with improved performance is proposed …

The reliability of the SiC MOSFET has always been a factor hindering the device application,
especially under high voltage and high current conditions, such as in the short circuit events …

This paper proposes the concept of SiC-on-insulator (SiCOI) lateral power device and its
analytical models. The SiCOI technology provides dielectric isolation and improves the …

In this paper, a new ultra-low specific on-resistance quasi SiC MOSFET is proposed.
Compared with the conventional SiC MOSFET, the proposed quasi SiC MOSFET has no …

In this paper, a lateral double diffused MOS which features a circular drift region (Cir-
LDMOS) is proposed and investigated by numerical simulation. The circular drift region in …

A silicon carbide (SiC) SGT MOSFET featuring a “一”-shaped P+ shielding region (PSR),
named SPDT-MOS, is proposed in this article. The improved PSR is introduced as a …

The SiC trench gate lateral MOSFET featuring dual source trenches is proposed in this work.
2D numerical simulations by TCAD are conducted to study the performance and the …

In this article, a novel high-k and equivalent variable lateral doping 4H-SiC lateral double-
diffused metal oxide semiconductor (LDMOS) field-effect transistor with improved …

Since neural networks do not face the convergence issues like TCAD simulations, we
attempted to construct two types of neural networks for numerical prediction and mechanism …