A method for performing atomic layer etching of a surface of a substrate is provided,
including: performing a surface conversion operation by exposing the surface of the …

Methods for material removal of a film, such as a metal nitride film, from a workpiece are
provided. One example implementation is directed to a method for processing a workpiece …

Abstract Systems and methods for material processing using wafer scale waves of precisely
controlled electrons in a DC plasma is presented. A surface floating potential of a substrate …

Systems and methods for material processing using wafer scale waves of precisely
controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma …

Abstract Systems and methods for material processing using wafer scale waves of precisely
controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma …

Abstract Systems and methods for material processing using wafer scale waves of precisely
controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma …

H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the
devices having at least one potential-jump barrier or surface barrier, eg PN junction …

Atomic layer etching of a substrate using a wafer scale wave of precisely controlled
electrons is presented. A volume of gaseous plasma including diluent and reactive species …

Abstract Systems and methods for material processing using wafer scale waves of precisely
controlled electrons in a DC plasma is presented. A surface floating potential of a substrate …

Atomic layer etching (ALE) of a substrate using a wafer scale wave of precisely controlled
electrons is presented. A volume of gaseous plasma including diluent and reactive species …