Diode lasers are by far the most efficient lasers currently available. With the ever‐continuing
improvement in diode laser technology, this type of laser has become increasingly attractive …

Strained-layer quantum wells have revolutionized the performance of near-infrared diode
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …

A 16 W continuous-wave room temperature front facet output optical power and 74%
wallplug efficiency were attained in 100 μm-aperture 1.06 μm-emitting laser diodes with 2-3 …

Sensitizer-free holmium-doped silica and fluoride mid-infrared fiber lasers are pumped
using a high-power diode laser operating at 1148 nm. A maximum output power of 162 mW …

Internal optical loss in separate-confinement laser heterostructures with an ultrawide (> 1
smm) waveguide has been studied theoretically and experimentally. It is found that an …

An overview of the three competing mid-infrared semiconductor laser approaches, being
diode, quantum cascade and interband cascade laser designs, is given. Limiting factors as …

Abstract Ho 3+-doped GdScO 3 crystal was successfully grown by the edge-defined film-fed
growth (EFG) method. The spectroscopic properties of Ho: GdScO 3 crystal were …

Optical, electrical, mechanical, and thermal properties of group III nitrides, inclusive of AlN,
GaN, InN and their ternary and quaternary alloys, are discussed. The driving force for group …

Theoretical studies on excitonic and optical properties of a single exciton confined in an
InP/ZnS heterostructure core/shell quantum dot embedded in various dielectric …

Polarized spectroscopic properties of a Ho3+-doped LuLiF4 (Ho: LuLF) single crystal grown
by the Czochralski method have been investigated as a promising material for 2μm and 2.9 …