Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3
Gallium oxide (β-Ga 2 O 3) is an emerging semiconductor with relevant properties for power
electronics, solar-blind photodetectors, and some sensor applications due to its ultra-wide …
electronics, solar-blind photodetectors, and some sensor applications due to its ultra-wide …
Recent progress on the effects of impurities and defects on the properties of Ga 2 O 3
Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
Point defects in Ga2O3
MD McCluskey - Journal of Applied Physics, 2020 - pubs.aip.org
In the field of high-power electronics, gallium oxide (Ga2O3) is attracting attention due to its
wide bandgap and ability to be doped n-type. Point defects, including vacancies, impurities …
wide bandgap and ability to be doped n-type. Point defects, including vacancies, impurities …
MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping
(010) β-(Al x Ga 1− x) 2 O 3 thin films were grown on (010) β-Ga 2 O 3 substrates via
metalorganic chemical vapor deposition with up to 40% Al incorporation by systematic …
metalorganic chemical vapor deposition with up to 40% Al incorporation by systematic …
[HTML][HTML] Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance
AY Polyakov, VI Nikolaev, EB Yakimov, F Ren… - Journal of Vacuum …, 2022 - pubs.aip.org
A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …
Deep-level defects in gallium oxide
As an ultrawide bandgap semiconductor, gallium oxide (Ga 2 O 3) has superior physical
properties and has been an emerging candidate in the applications of power electronics and …
properties and has been an emerging candidate in the applications of power electronics and …
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor
Understanding the unique properties of ultra-wide band gap semiconductors requires
detailed information about the exact nature of point defects and their role in determining the …
detailed information about the exact nature of point defects and their role in determining the …
Impact of 100 MeV high-energy proton irradiation on β-Ga2O3 solar-blind photodetector: Oxygen vacancies formation and resistance switching effect
MM Chang, DY Guo, XL Zhong, FB Zhang… - Journal of Applied …, 2022 - pubs.aip.org
β-Ga 2 O 3 based solar-blind photodetectors have strong radiation hardness and great
potential applications in Earth's space environment due to the large bandgap and high bond …
potential applications in Earth's space environment due to the large bandgap and high bond …
[HTML][HTML] In-depth investigation of low-energy proton irradiation effect on the structural and photoresponse properties of ε-Ga2O3 thin films
Ga 2 O 3 possesses an ultra-wide bandgap (∼ 4.9 eV) and an extremely large breakdown
field strength (∼ 8 MV/cm), which promises extraordinary application potential in power …
field strength (∼ 8 MV/cm), which promises extraordinary application potential in power …
[HTML][HTML] Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition
The results of a detailed investigation of electrically active defects in metal-organic chemical
vapor deposition (MOCVD)-grown β-Ga 2 O 3 (010) epitaxial layers are described. A …
vapor deposition (MOCVD)-grown β-Ga 2 O 3 (010) epitaxial layers are described. A …