Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The
precursors have the for mula:(SiHz) N—SiH, X, wherein X is selected from a halogen atom; …

Silicon carbonitride (SiCN), an intermediate structure between silicon carbide and silicon
nitride, has emerged as a material of interest to increase the performance of silicon-based …

Silicon carbonitride (SiC x N y) materials, inspired by their outstanding multifunctional
properties, are finding increasing applications in a variety of fields, including as next …

Silicon nitride (SiNx) films have been prepared at extremely high deposition rates by the
atmospheric pressure plasma chemical vapor deposition (AP-PCVD) technique on Si (001) …

The fabrication of a stamp reinforced with silicon nitride is presented for its use in
nanoimprint lithography. The fabrication process is based on edge lithography using …

In this study, the degradation of the subthreshold swing (SS) and the hump effect are
observed in the local oxidation of silicon (LOCOS) metal-oxide-semiconductor field-effect …

Using the hot wire (HW) chemical vapor deposition (CVD) method for the deposition of
silicon nitride (SiNx) and amorphous silicon (a-Si: H) thin films we have achieved high …

A method to fabricate nano-ridges over a full wafer is presented. The fabrication method
uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of …

We report a tubular plasma source that is capable of creating high-activity nitrogen plasma
flow at low pressure. The high-activity nitrogen plasma was produced by a continue low …

In this work, we present the morphological and electrical characterization of hydrogenated
amorphous siliconfilms, which were deposited at room temperature on an+-type silicon …