Integration technology of micro-led for next-generation display
D Chen, YC Chen, G Zeng, DW Zhang, HL Lu - Research, 2023 - spj.science.org
Inorganic micro light-emitting diodes (micro-LEDs) based on III-V compound semiconductors
have been widely studied for self-emissive displays. From chips to applications, integration …
have been widely studied for self-emissive displays. From chips to applications, integration …
Heterogeneous and monolithic 3D integration technology for mixed-signal ICs
For next-generation system-on-chips (SoCs) in diverse applications (RF, sensor, display,
etc.) which require high-performance, small form factors, and low power consumption …
etc.) which require high-performance, small form factors, and low power consumption …
All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001)
Directly grown III-V quantum dot (QD) laser on on-axis Si (001) is a good candidate for
achieving monolithically integrated Si photonics light source. Nowadays, laser structures …
achieving monolithically integrated Si photonics light source. Nowadays, laser structures …
Understanding the sidewall passivation effects in AlGaInP/GaInP micro-LED
The passivation effects of sulfur treatment and Al2O3 passivation for AlGaInP/GaInP red
micro-light-emitting-diodes (LEDs) were investigated in terms of the external quantum …
micro-light-emitting-diodes (LEDs) were investigated in terms of the external quantum …
Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation
In this study, we proposed a strategy to fabricate vertically stacked subpixel (VSS) micro-light-
emitting diodes (μ-LEDs) for future ultrahigh-resolution microdisplays. At first, to vertically …
emitting diodes (μ-LEDs) for future ultrahigh-resolution microdisplays. At first, to vertically …
Experimental demonstration of germanium-on-silicon slot waveguides at mid-infrared wavelength
We first demonstrated a slot waveguide based on a Ge-on-Si (GOS) platform with a 3 μm
thickness of the Ge in the mid-infrared wavelength range at 4.2 μm. We numerically …
thickness of the Ge in the mid-infrared wavelength range at 4.2 μm. We numerically …
Stackable InGaAs-on-insulator HEMTs for monolithic 3-D integration
In this article, we have demonstrated 125-nm-gate InGaAs-on-insulator (InGaAs-OI) high-
electron-mobility transistors (HEMTs) on Si substrates via wafer bonding. The highlights of …
electron-mobility transistors (HEMTs) on Si substrates via wafer bonding. The highlights of …
Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging …
In this study, multicolor photodetectors (PDs) fabricated by using bulk pin-based visible
GaAs and near-infrared InGaAs structures were monolithically integrated through a high …
GaAs and near-infrared InGaAs structures were monolithically integrated through a high …
Simulation Study on the Design of Sub- Non-Hysteretic Negative Capacitance FET Using Capacitance Matching
In this paper, approaches to obtain the sub-kT/q non-hysteretic operation mode in negative
capacitance (NC) field-effect-transistors for a wide band of applied gate voltages, using …
capacitance (NC) field-effect-transistors for a wide band of applied gate voltages, using …
3D stackable synaptic transistor for 3D integrated artificial neural networks
Although they have attracted enormous attention in recent years, software-based and two-
dimensional hardware-based artificial neural networks (ANNs) may consume a great deal of …
dimensional hardware-based artificial neural networks (ANNs) may consume a great deal of …