Towards spike-based machine intelligence with neuromorphic computing
Guided by brain-like 'spiking'computational frameworks, neuromorphic computing—brain-
inspired computing for machine intelligence—promises to realize artificial intelligence while …
inspired computing for machine intelligence—promises to realize artificial intelligence while …
Semiconductor quantum dots for memories and neuromorphic computing systems
The continued growth in the demand of data storage and processing has spurred the
development of high-performance storage technologies and brain-inspired neuromorphic …
development of high-performance storage technologies and brain-inspired neuromorphic …
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
D Ielmini - Semiconductor Science and Technology, 2016 - iopscience.iop.org
With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …
scalable memory technologies are being researched for data storage and data-driven …
A review of emerging non-volatile memory (NVM) technologies and applications
A Chen - Solid-State Electronics, 2016 - Elsevier
This paper will review emerging non-volatile memory (NVM) technologies, with the focus on
phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM) …
phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM) …
ReRAM: History, status, and future
Y Chen - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the resistive random-access memory (ReRAM) technology initialization
back in the 1960s and its heavily focused research and development from the early 2000s …
back in the 1960s and its heavily focused research and development from the early 2000s …
In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and …
The low communication bandwidth between memory and processing units in conventional
von Neumann machines does not support the requirements of emerging applications that …
von Neumann machines does not support the requirements of emerging applications that …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Neuromemristive circuits for edge computing: A review
O Krestinskaya, AP James… - IEEE transactions on …, 2019 - ieeexplore.ieee.org
The volume, veracity, variability, and velocity of data produced from the ever increasing
network of sensors connected to Internet pose challenges for power management …
network of sensors connected to Internet pose challenges for power management …
Mixed-precision in-memory computing
As complementary metal–oxide–semiconductor (CMOS) scaling reaches its technological
limits, a radical departure from traditional von Neumann systems, which involve separate …
limits, a radical departure from traditional von Neumann systems, which involve separate …
Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride
The use of 2D materials to improve the capabilities of electronic devices is a promising
strategy that has recently gained much interest in both academia and industry. However …
strategy that has recently gained much interest in both academia and industry. However …