Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal …
Atomic layer deposition (ALD) of gate dielectrics on two-dimensional transition-metal
dichalcogenides (2D TMDs) is challenging due to their chemically inert surfaces. Although …
dichalcogenides (2D TMDs) is challenging due to their chemically inert surfaces. Although …